SFS9640 PDF and Equivalents Search

Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS(on) = 0.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = -6.2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -200V Low RDS(ON) 0.344 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic V... See More ⇒

Advanced Power MOSFET FEATURES BVDSS = -250 V Avalanche Rugged Technology RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = -4.9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -250V Low RDS(ON) 0.549 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic V... See More ⇒

SFS9634 Advanced Power MOSFET FEATURES BVDSS = -250 V Avalanche Rugged Technology RDS(on) = 1.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = -3.4 A Improved Gate Charge Extended Safe Operating Area TO-220F Lower Leakage Current 10 A (Max.) @ VDS = -250V Low RDS(ON) 0.876 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol ... See More ⇒

Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = -4.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -200V Low RDS(ON) 0.581 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic V... See More ⇒

Advanced Power MOSFET FEATURES BVDSS = -250 V Avalanche Rugged Technology RDS(on) = 2.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = -2.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -250V Low RDS(ON) 1.65 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va... See More ⇒

Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = -3.0 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -200V Low RDS(ON) 1.111 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic V... See More ⇒

Advanced Power MOSFET FEATURES BVDSS = -250 V Avalanche Rugged Technology RDS(on) = 1.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = -3.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -250V Low RDS(ON) 0.876 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic V... See More ⇒

Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = -1.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -200V Low RDS(ON) 2.25 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Val... See More ⇒

Advanced Power MOSFET FEATURES BVDSS = -250 V Avalanche Rugged Technology RDS(on) = 4.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = -1.27 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -250V Low RDS(ON) 3.5 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Va... See More ⇒