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 045y.pdf

STF11N65M2(045Y) N-channel 650 V, 0.6 typ., 7 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP package Datasheet - preliminary data Features Order code VDS RDS(on) max ID STF11N65M2(045Y) 650 V 0.67 7 A Extremely low gate charge Lower RDS(on) x area vs previous generation 3 2 1 Low gate input resistance 100% avalanche tested TO-220FP Zener-protected

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 mcac80n045y-tp.pdf

MCAC80N045Y Electrical Characteristics @ 25 C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=250 A Drain-Source Breakdown Voltage 45 V IGSS VDS=0V, VGS = 20V Gate-Source Leakage Current 100 nA VDS=32V, VGS=0V, TJ=25 C 1 IDSS Zero Gate Voltage Drain Current A VDS=32V, VGS=0V, TJ=85 C 30 VGS(t

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 stf11n65m2-045y.pdf

STF11N65M2(045Y) Datasheet N-channel 650 V, 0.60 typ., 7 A MDmesh M2 Power MOSFET in a TO-220FP narrow leads package Features VDS RDS(on) max. ID PTOT Order code STF11N65M2(045Y) 650 V 0.68 7 A 25 W Extremely low gate charge 3 2 1 Excellent output capacitance (COSS) profile TO-220FP narrow leads 100% avalanche tested Zener-protected D(2) Applications

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 mcac80n045y.pdf

MCAC80N045Y Electrical Characteristics @ 25 C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=250 A Drain-Source Breakdown Voltage 45 V IGSS VDS=0V, VGS = 20V Gate-Source Leakage Current 100 nA VDS=32V, VGS=0V, TJ=25 C 1 IDSS Zero Gate Voltage Drain Current A VDS=32V, VGS=0V, TJ=85 C 30 VGS(t