All MOSFET. 045Y Datasheet

 

045Y Datasheet and Replacement


   Type Designator: 045Y
   Marking Code: 11N65M2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 12.5 nC
   tr ⓘ - Rise Time: 7.5 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.67 Ohm
   Package: TO-220FP
 

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045Y Datasheet (PDF)

 ..1. Size:831K  st
 045y.pdf pdf_icon

045Y

STF11N65M2(045Y)N-channel 650 V, 0.6 typ., 7 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP packageDatasheet - preliminary dataFeaturesOrder code VDS RDS(on) max IDSTF11N65M2(045Y) 650 V 0.67 7 A Extremely low gate charge Lower RDS(on) x area vs previous generation321 Low gate input resistance 100% avalanche testedTO-220FP Zener-protected

 0.1. Size:869K  1
 mcac80n045y-tp.pdf pdf_icon

045Y

MCAC80N045YElectrical Characteristics @ 25C (Unless Otherwise Specified)Parameter Symbol Test Conditions Min Typ Max UnitStatic CharacteristicsV(BR)DSS VGS=0V, ID=250ADrain-Source Breakdown Voltage 45 VIGSS VDS=0V, VGS =20VGate-Source Leakage Current 100 nAVDS=32V, VGS=0V, TJ=25C1IDSSZero Gate Voltage Drain Current AVDS=32V, VGS=0V, TJ=85C30VGS(t

 0.2. Size:447K  st
 stf11n65m2-045y.pdf pdf_icon

045Y

STF11N65M2(045Y)DatasheetN-channel 650 V, 0.60 typ., 7 A MDmesh M2 Power MOSFET in a TO-220FP narrow leads packageFeaturesVDS RDS(on) max. ID PTOTOrder codeSTF11N65M2(045Y) 650 V 0.68 7 A 25 W Extremely low gate charge321 Excellent output capacitance (COSS) profileTO-220FP narrow leads 100% avalanche tested Zener-protectedD(2) Applications

 0.3. Size:869K  mcc
 mcac80n045y.pdf pdf_icon

045Y

MCAC80N045YElectrical Characteristics @ 25C (Unless Otherwise Specified)Parameter Symbol Test Conditions Min Typ Max UnitStatic CharacteristicsV(BR)DSS VGS=0V, ID=250ADrain-Source Breakdown Voltage 45 VIGSS VDS=0V, VGS =20VGate-Source Leakage Current 100 nAVDS=32V, VGS=0V, TJ=25C1IDSSZero Gate Voltage Drain Current AVDS=32V, VGS=0V, TJ=85C30VGS(t

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History: WNM2034

Keywords - 045Y MOSFET datasheet

 045Y cross reference
 045Y equivalent finder
 045Y lookup
 045Y substitution
 045Y replacement

 

 
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