12N50A Todos los transistores

 ..1. Size:34K  microsemi
 12n50a.pdf

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 MSAER12N50A FAX (714) 966-5256 MSAFR12N50A Features 500 Volts Ultrafast rectifier in parallel with the body diode (MSAE type only) 12 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability 400 m Hermetically sealed, surface mount power package Low p

 0.1. Size:175K  international rectifier
 irfbl12n50a.pdf

PD - 91818A SMPS MOSFET IRFBL12N50A HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 500V 0.45 13A High Speed Power Switching Benefits Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Super-D2PakTM Avalanche V

 0.2. Size:62K  ixys
 ixth12n50a ixtm12n50a.pdf

VDSS ID25 RDS(on) Standard IXTH 12 N50A 500 V 12 A 0.4 Power MOSFET IXTM 12 N50A 500 V 12 A 0.4 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V D (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C12 A IDM TC

 0.3. Size:44K  microsemi
 msaer12n50a msafr12n50a.pdf

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 MSAER12N50A FAX (714) 966-5256 MSAFR12N50A Features 500 Volts Ultrafast rectifier in parallel with the body diode (MSAE type only) 12 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability 400 m Hermetically sealed, surface mount power package Low p