12N50A PDF and Equivalents Search

 

12N50A Specs and Replacement

Type Designator: 12N50A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 190 nS

Cossⓘ - Output Capacitance: 600 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: LCC

12N50A substitution

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12N50A datasheet

 ..1. Size:34K  microsemi
12n50a.pdf pdf_icon

12N50A

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 MSAER12N50A FAX (714) 966-5256 MSAFR12N50A Features 500 Volts Ultrafast rectifier in parallel with the body diode (MSAE type only) 12 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability 400 m Hermetically sealed, surface mount power package Low p... See More ⇒

 0.1. Size:175K  international rectifier
irfbl12n50a.pdf pdf_icon

12N50A

PD - 91818A SMPS MOSFET IRFBL12N50A HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 500V 0.45 13A High Speed Power Switching Benefits Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Super-D2PakTM Avalanche V... See More ⇒

 0.2. Size:62K  ixys
ixth12n50a ixtm12n50a.pdf pdf_icon

12N50A

VDSS ID25 RDS(on) Standard IXTH 12 N50A 500 V 12 A 0.4 Power MOSFET IXTM 12 N50A 500 V 12 A 0.4 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V D (TAB) VGS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C12 A IDM TC ... See More ⇒

 0.3. Size:44K  microsemi
msaer12n50a msafr12n50a.pdf pdf_icon

12N50A

2830 S. Fairview St. Santa Ana, CA 92704 PH (714) 979-8220 MSAER12N50A FAX (714) 966-5256 MSAFR12N50A Features 500 Volts Ultrafast rectifier in parallel with the body diode (MSAE type only) 12 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability 400 m Hermetically sealed, surface mount power package Low p... See More ⇒

Detailed specifications: 10N60AF, 10N60H, 10N80AF, 10N80B, 10N90A, 11N10, 11N10G, 11P50A, IRF2807, 12N60A, 12N60AF, 13N110A, 13N60A, 13N60AF, 16N60A, 16N60AF, 16N60B

Keywords - 12N50A MOSFET specs

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