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16N60B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 16N60B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 134.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 16 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15.5 nS
   Cossⓘ - Capacitancia de salida: 70 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.199 Ohm
   Paquete / Cubierta: TO-3PB
 

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16N60B Datasheet (PDF)

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16N60B

RoHS 16N60 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(16A, 600Volts)DESCRIPTION The Nell 16N60 is a three-terminal silicon device with current conduction capability of 16A,Dfast switching speed, low on-state resistance,breakdown voltage rating of 600V ,and max. threshold voltage of 4 volts. They are designed for use in applications. sucha

 0.1. Size:163K  ixys
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16N60B

IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET NChannel Enhancement Mode N-Channel Enhancement Mode Switch Mode RF MOSFET Low Qg and Rg Low Capacitance Z-MOSTM MOSFET Process VDSS = 600 V High dv/dt Optimized for RF Operation Nanosecond Switching Ideal for Class C, D, & E Applications ID25 = 18 A Symbol Test Conditions Maximum Ratings RDS(on) 0.56

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16N60B

HiPerFASTTM IGBTs VCES = 600VIXGA16N60B2D1B2-Class High Speed IC110 = 16AIXGP16N60B2D1w/ Diode VCE(sat) 2.3VIXGH16N60B2D1tfi(typ) = 70nsTO-263 AA (IXGA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VGC C (

 0.3. Size:221K  ixys
 ixga16n60b2.pdf pdf_icon

16N60B

HiPerFASTTM IGBTs VCES = 600VIXGA16N60B2B2-Class High Speed IC110 = 16AIXGP16N60B2VCE(sat) 2.3Vtfi(typ) = 70nsTO-263 AA (IXGA)Symbol Test Conditions Maximum Ratings GEVCES TJ = 25C to 150C 600 VC (Tab)VCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VTO-220AB (IXGP)VGEM Transient 30 VIC25 TC = 25C40 AIC110 TC = 110

MOSTRAR MÁS

Otros transistores... 12N50A , 12N60A , 12N60AF , 13N110A , 13N60A , 13N60AF , 16N60A , 16N60AF , IRF730 , 19MT050XFAPBF , 1HN04CH , 1HP04CH , 1N60AF , 1N60E , 1N60F , 1N60G , 20N50B .

History: BLM7002K | SI6954ADQ | IRFF9233 | SI4N60L-TA3-T | ZXMP7A17K | SI5432DC | CS3205A8

 

 
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