16N60B PDF and Equivalents Search

 

16N60B Specs and Replacement

Type Designator: 16N60B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 134.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15.5 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.199 Ohm

Package: TO-3PB

16N60B substitution

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16N60B datasheet

 ..1. Size:474K  nell
16n60a 16n60af 16n60b.pdf pdf_icon

16N60B

RoHS 16N60 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (16A, 600Volts) DESCRIPTION The Nell 16N60 is a three-terminal silicon device with current conduction capability of 16A, D fast switching speed, low on-state resistance, breakdown voltage rating of 600V ,and max. threshold voltage of 4 volts. They are designed for use in applications. such a... See More ⇒

 0.1. Size:163K  ixys
ixzr16n60a ixzr16n60b.pdf pdf_icon

16N60B

IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET NChannel Enhancement Mode N-Channel Enhancement Mode Switch Mode RF MOSFET Low Qg and Rg Low Capacitance Z-MOSTM MOSFET Process VDSS = 600 V High dv/dt Optimized for RF Operation Nanosecond Switching Ideal for Class C, D, & E Applications ID25 = 18 A Symbol Test Conditions Maximum Ratings RDS(on) 0.56 ... See More ⇒

 0.2. Size:214K  ixys
ixga16n60b2d1.pdf pdf_icon

16N60B

HiPerFASTTM IGBTs VCES = 600V IXGA16N60B2D1 B2-Class High Speed IC110 = 16A IXGP16N60B2D1 w/ Diode VCE(sat) 2.3V IXGH16N60B2D1 tfi(typ) = 70ns TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V G C C (... See More ⇒

 0.3. Size:221K  ixys
ixga16n60b2.pdf pdf_icon

16N60B

HiPerFASTTM IGBTs VCES = 600V IXGA16N60B2 B2-Class High Speed IC110 = 16A IXGP16N60B2 VCE(sat) 2.3V tfi(typ) = 70ns TO-263 AA (IXGA) Symbol Test Conditions Maximum Ratings G E VCES TJ = 25 C to 150 C 600 V C (Tab) VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V TO-220AB (IXGP) VGEM Transient 30 V IC25 TC = 25 C40 A IC110 TC = 110 ... See More ⇒

Detailed specifications: 12N50A, 12N60A, 12N60AF, 13N110A, 13N60A, 13N60AF, 16N60A, 16N60AF, IRFB31N20D, 19MT050XFAPBF, 1HN04CH, 1HP04CH, 1N60AF, 1N60E, 1N60F, 1N60G, 20N50B

Keywords - 16N60B MOSFET specs

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