All MOSFET. 16N60B Datasheet

 

16N60B Datasheet and Replacement


   Type Designator: 16N60B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 134.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 15.5 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.199 Ohm
   Package: TO-3PB
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16N60B Datasheet (PDF)

 ..1. Size:474K  nell
 16n60a 16n60af 16n60b.pdf pdf_icon

16N60B

RoHS 16N60 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(16A, 600Volts)DESCRIPTION The Nell 16N60 is a three-terminal silicon device with current conduction capability of 16A,Dfast switching speed, low on-state resistance,breakdown voltage rating of 600V ,and max. threshold voltage of 4 volts. They are designed for use in applications. sucha

 0.1. Size:163K  ixys
 ixzr16n60a ixzr16n60b.pdf pdf_icon

16N60B

IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET NChannel Enhancement Mode N-Channel Enhancement Mode Switch Mode RF MOSFET Low Qg and Rg Low Capacitance Z-MOSTM MOSFET Process VDSS = 600 V High dv/dt Optimized for RF Operation Nanosecond Switching Ideal for Class C, D, & E Applications ID25 = 18 A Symbol Test Conditions Maximum Ratings RDS(on) 0.56

 0.2. Size:214K  ixys
 ixga16n60b2d1.pdf pdf_icon

16N60B

HiPerFASTTM IGBTs VCES = 600VIXGA16N60B2D1B2-Class High Speed IC110 = 16AIXGP16N60B2D1w/ Diode VCE(sat) 2.3VIXGH16N60B2D1tfi(typ) = 70nsTO-263 AA (IXGA)GEC (Tab)Symbol Test Conditions Maximum RatingsTO-220AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VVGEM Transient 30 VGC C (

 0.3. Size:221K  ixys
 ixga16n60b2.pdf pdf_icon

16N60B

HiPerFASTTM IGBTs VCES = 600VIXGA16N60B2B2-Class High Speed IC110 = 16AIXGP16N60B2VCE(sat) 2.3Vtfi(typ) = 70nsTO-263 AA (IXGA)Symbol Test Conditions Maximum Ratings GEVCES TJ = 25C to 150C 600 VC (Tab)VCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous 20 VTO-220AB (IXGP)VGEM Transient 30 VIC25 TC = 25C40 AIC110 TC = 110

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History: FQD4N25TM | 2SK3192

Keywords - 16N60B MOSFET datasheet

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