16N60B - описание и поиск аналогов

RoHS 16N60 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (16A, 600Volts) DESCRIPTION The Nell 16N60 is a three-terminal silicon device with current conduction capability of 16A, D fast switching speed, low on-state resistance, breakdown voltage rating of 600V ,and max. threshold voltage of 4 volts. They are designed for use in applications. such a

IXZR16N60 & IXZR16N60A/B Z-MOS RF Power MOSFET NChannel Enhancement Mode N-Channel Enhancement Mode Switch Mode RF MOSFET Low Qg and Rg Low Capacitance Z-MOSTM MOSFET Process VDSS = 600 V High dv/dt Optimized for RF Operation Nanosecond Switching Ideal for Class C, D, & E Applications ID25 = 18 A Symbol Test Conditions Maximum Ratings RDS(on) 0.56

HiPerFASTTM IGBTs VCES = 600V IXGA16N60B2D1 B2-Class High Speed IC110 = 16A IXGP16N60B2D1 w/ Diode VCE(sat) 2.3V IXGH16N60B2D1 tfi(typ) = 70ns TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V G C C (

HiPerFASTTM IGBTs VCES = 600V IXGA16N60B2 B2-Class High Speed IC110 = 16A IXGP16N60B2 VCE(sat) 2.3V tfi(typ) = 70ns TO-263 AA (IXGA) Symbol Test Conditions Maximum Ratings G E VCES TJ = 25 C to 150 C 600 V C (Tab) VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V TO-220AB (IXGP) VGEM Transient 30 V IC25 TC = 25 C40 A IC110 TC = 110

HiPerFASTTM IGBTs VCES = 600V IXGA16N60B2D1 B2-Class High Speed IC110 = 16A IXGP16N60B2D1 w/ Diode VCE(sat) 2.3V IXGH16N60B2D1 tfi(typ) = 70ns TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V G C C (

IXGC 16N60B2 HiPerFASTTM IGBT VCES = 600 V IXGC 16N60B2D1 B2-Class High Speed IC25 = 28 A IGBT in ISOPLUS220TM Case VCE(sat) = 2.3 V Electrically Isolated Back Surface tfi(typ) = 80 ns Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings ISOPLUS 220TM (IXGC) E153432 VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V

IXGC 16N60B2 HiPerFASTTM IGBT VCES = 600 V IXGC 16N60B2D1 B2-Class High Speed IC25 = 28 A IGBT in ISOPLUS220TM Case VCE(sat) = 2.3 V Electrically Isolated Back Surface tfi(typ) = 80 ns Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings ISOPLUS 220TM (IXGC) E153432 VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V

HiPerFASTTM IGBTs VCES = 600V IXGA16N60B2 B2-Class High Speed IC110 = 16A IXGP16N60B2 VCE(sat) 2.3V tfi(typ) = 70ns TO-263 AA (IXGA) Symbol Test Conditions Maximum Ratings G E VCES TJ = 25 C to 150 C 600 V C (Tab) VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V TO-220AB (IXGP) VGEM Transient 30 V IC25 TC = 25 C40 A IC110 TC = 110

HiPerFASTTM IGBTs VCES = 600V IXGA16N60B2D1 B2-Class High Speed IC110 = 16A IXGP16N60B2D1 w/ Diode VCE(sat) 2.3V IXGH16N60B2D1 tfi(typ) = 70ns TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXGP) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V VGEM Transient 30 V G C C (

JMPF16N60BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 600V, 16A Load Switch RDS(ON)

JMPC16N60BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 600V, 16A Load Switch RDS(ON)