20N15 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

20N15 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 20N15

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 90 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 64 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm

Encapsulados: TO-252

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20N15 datasheet

..1. Size:218K inchange semiconductor
20n15.pdf pdf_icon

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 20N15 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V = 150V(Min) DSS Static Drain-Source On-Resistance R = 0.075 (Max) DS(on) Fast Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications in power supplies Mot

0.1. Size:2979K 1
b20n15d.pdf pdf_icon

0.2. Size:757K 1
hsba20n15s.pdf pdf_icon

HSBA20N15S N-Ch 150V Fast Switching MOSFETs Description Product Summary VDS 150 V The HSBA20N15S is the highest performance trench N-ch MOSFETs with extreme high cell RDS(ON),max 56 m density, which provide excellent RDSON and gate charge for most of the synchronous buck ID 23 A converter applications. The HSBA20N15S meet the RoHS and Green Product requirement, 100% EA

0.3. Size:369K motorola
mth20n15 mtm20n15.pdf pdf_icon

0.4. Size:619K infineon
bsz520n15ns3 bsz520n15ns3g.pdf pdf_icon

pe BSZ520N15NS3 G TM 3 Power-Transistor Product Summary Features V 1 D Q ) AD > J65 7@B 54 54 4@?F6BC @? R m D n) m x Q ( 492??6= ?@B>2= =6F6= I 1 D Q H46==6?D 82D6 492B86 H R AB@5E4D ) ' D n) Q &@G @? B6C CD2?46 R D n) G D ON Q T @A6B2D ?8 D6>A6B2DEB6 Q *3 7B66 =625 A=2D ?8 , @"- 4@>A= 2?D 1) Q + E2= 7 65 244@B5 ?8 D@ $ 7@B D2B86D 2AA= 42D @? Q "2=@86? 7B6

0.5. Size:657K infineon
bsc520n15ns3 bsc520n15ns3g.pdf pdf_icon

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0.6. Size:177K ixys
ixfh120n15p ixft120n15p.pdf pdf_icon

IXFH 120N15P VDSS = 150 V PolarHTTM HiPerFET IXFT 120N15P ID25 = 120 A Power MOSFET RDS(on) 16 m trr 200 ns N-Channel Enhancement Mode Avalanche Energy Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 175 C 150 V VDGR TJ = 25 C to 175 C; RGS = 1 M 150 V VDSS

0.7. Size:129K ixys
ixtk20n150 ixtx20n150.pdf pdf_icon

High Voltage Power VDSS = 1500V IXTK20N150 MOSFETs w/ Extended ID25 = 20A IXTX20N150 FBSOA RDS(on)

0.8. Size:171K ixys
ixtq120n15p ixtt120n15p.pdf pdf_icon

IXTQ 120N15P VDSS = 150 V PolarHTTM IXTT 120N15P ID25 = 120 A Power MOSFET RDS(on) 16 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25 C to 175 C 150 V VDGR TJ = 25 C to 175 C; RGS = 1 M 150 V VDSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C 120 A G D

0.9. Size:126K ixys
ixfx220n15p ixfk220n15p.pdf pdf_icon

PolarTM Power MOSFET VDSS = 150V IXFK220N15P ID25 = 220A HiperFETTM IXFX220N15P RDS(on) 9m trr 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-264 (IXFK) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 175 C 150 V D S VDGR TJ = 25 C to 175 C, RGS = 1M 150 V Tab VGSS Conti

0.10. Size:799K mcc
mcu20n15.pdf pdf_icon

MCU20N15 Features Excellent Gate Charge x RDS(on) Product(FOM) Very Low On-Resistance RDS(on) Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-CHANNEL Halogen Free Available Upon Request By Adding Suffix "-HF" MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Ope

0.11. Size:1543K mcc
mcac20n15.pdf pdf_icon

MCAC20N15 Electrical Characteristics @ 25 C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=250 A Drain-Source Breakdown Voltage 150 V IGSS VDS=0V, VGS = 25V Gate-Source Leakage Current 100 nA IDSS VDS=120V, VGS=0V Zero Gate Voltage Drain Current 1 A VGS(th) VDS=VGS, ID=250 A Gate-Threshold Voltage 2

0.12. Size:113K onsemi
mtp20n15e-d.pdf pdf_icon

MTP20N15E Power MOSFET 20 Amps, 150 Volts N-Channel TO-220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also http //onsemi.com offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power converters 20 AMPERES and PWM motor controls, these dev

0.13. Size:110K onsemi
mtp20n15eg.pdf pdf_icon

0.14. Size:145K secos
ssd20n15-250d.pdf pdf_icon

SSD20N15-250D N-Ch Enhancement Mode Power MOSFET 12A, 150V, RDS(ON) 255m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench TO-252(D-Pack) process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are

0.15. Size:234K ape
ap20n15agh.pdf pdf_icon

AP20N15AGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 150V Lower Gate Charge RDS(ON) 100m Fast Switching Characteristic ID 20.5A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the G D best combination of fast switching,

0.16. Size:94K ape
ap20n15gh-hf.pdf pdf_icon

AP20N15GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 150V Lower Gate Charge RDS(ON) 100m Fast Switching Characteristic ID 20A G RoHS Compliant & Halogen-Free S Description G Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with the best combination of fast

0.17. Size:94K ape
ap20n15agh-hf.pdf pdf_icon

AP20N15AGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 150V Lower Gate Charge RDS(ON) 100m Fast Switching Characteristic ID 20.5A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching,

0.18. Size:235K ape
ap20n15gh.pdf pdf_icon

AP20N15GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 150V Lower Gate Charge RDS(ON) 100m Fast Switching Characteristic ID 20A G RoHS Compliant & Halogen-Free S Description AP20N15 series are from Advanced Power innovated design and silicon G D S process technology to achieve

0.19. Size:60K ape
ap20n15agi-hf.pdf pdf_icon

AP20N15AGI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 150V Lower Gate Charge RDS(ON) 100m Fast Switching Characteristic ID 20.5A G RoHS Compliant & Halogen-Free S Description AP20N15A series are from Advanced Power innovated design and silicon process technology to achieve the lo

0.20. Size:212K ape
ap20n15gi.pdf pdf_icon

AP20N15GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 150V Simple Drive Requirement RDS(ON) 100m Fast Switching Characteristic ID3 20A G RoHS Compliant & Halogen-Free S Description AP20N15 series are from Advanced Power innovated design and silicon process technology to achieve the low

0.21. Size:96K ape
ap20n15agp-hf.pdf pdf_icon

AP20N15AGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 150V Lower Gate Charge RDS(ON) 100m Fast Switching Characteristic ID 20.5A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugged

0.22. Size:94K ape
ap20n15gi-hf.pdf pdf_icon

AP20N15GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 150V D Single Drive Requirement RDS(ON) 100m Fast Switching Characteristic ID 20A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D TO-220CFM(I)

0.23. Size:323K analog power
am20n15-250b.pdf pdf_icon

Analog Power AM20N15-250B N-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 200 @ VGS = 10V Low thermal impedance 150 21a 225 @ VGS = 5.5V Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIM

0.24. Size:315K analog power
am20n15-250d.pdf pdf_icon

Analog Power AM20N15-250D N-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 255 @ VGS = 10V 12 Low thermal impedance 150 290 @ VGS = 4.5V 11 Fast switching speed Typical Applications PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost

0.25. Size:106K samhop
stu20n15 std20n15.pdf pdf_icon

Gre r r P Pr Pr Pro STU/D20N15 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Typ VDSS ID Rugged and reliable. 58 @ VGS=10V TO-252 and TO-251 Package. 150V 20A 65 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK

0.26. Size:267K tysemi
kxp20n15.pdf pdf_icon

MOSFET e IC SMD Type SMD pe MOSFET DIP pe MOSFET SMD Type MOSFET DIP Type MOSFET SMDType C DIPTyType C SMDType IIC DIPTyType IIC SMDType SMDType Product specification KXP20N15 Features VDS (V) = 150V RDS(ON) 0.13 (VGS = 10V) 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage V

0.27. Size:327K ruichips
ru120n15r.pdf pdf_icon

RU120N15R N-Channel Advanced Power MOSFET Features Pin Description 150V/120A RDS (ON)=15m (Typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available TO-220 Applications Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching N-Channel MOSFET A

0.28. Size:319K ruichips
ru120n15q.pdf pdf_icon

RU120N15Q N-Channel Advanced Power MOSFET Features Pin Description 150V/120A RDS (ON)=15m (Typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available Applications TO-247 Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching N-Channel MOSFET A

0.29. Size:1097K matsuki electric
me20n15 me20n15-g.pdf pdf_icon

ME20N15 / ME20N15-G N- Channel 150V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 90m @VGS=10V The ME20N15 is the N-Channel logic enhancement mode power RDS(ON) 110m @VGS=7V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially t

0.30. Size:1216K matsuki electric
me20n15f.pdf pdf_icon

ME20N15F N- Channel 150V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 90m @VGS=10V The ME20N15F is the N-Channel logic enhancement mode power RDS(ON) 110m @VGS=7V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to

0.31. Size:950K trinnotech
tgan20n150fd.pdf pdf_icon

TGAN20N150FD Field Stop Trench IGBT Features TO 3PN 1500V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC Qualification E C G Applications Induction Heating, Inverterized Microwave Ovens, Soft Switching Appl

0.32. Size:416K way-on
wmo20n15t2.pdf pdf_icon

WMO20N15T2 150V N-Channel Enhancement Mode Power MOSFET Description WMO20N15T2 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D Features S G V = 150V, I = 20A DS D TO-252 R

0.33. Size:4651K first semi
fir20n15lg.pdf pdf_icon

FIR20N15LG N-Channel Enhancement Mode Power Mosfet PIN Connection TO-252 Description The FIR20N15LG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A RDS(ON)

0.34. Size:284K dacosemi
damh220n150.pdf pdf_icon

DAMH220N150 DACO SEMICONDUCTOR CO., LTD. N-Channel Enhancement Mode MOSFET Preliminary HB-9434 Features VDSS = 150V RDS(ON)

0.35. Size:510K dacosemi
dami220n150.pdf pdf_icon

DAMI220N150 DACO SEMICONDUCTOR CO., LTD. N-Channel Enhancement Mode MOSFET Preliminary SOT-227 Features S VDSS = 150V G RDS(ON)

0.36. Size:994K huashuo
hsu20n15a.pdf pdf_icon

HSU20N15A N-Ch 150V Fast Switching MOSFETs Description Product Summary VDS 150 V The HSU20N15A is the highest performance trench N-ch MOSFETs with extreme high cell RDS(ON),typ 47 m density, which provide excellent RDSON and gate charge for most of the synchronous buck ID 23 A converter applications. The HSU20N15A meet the RoHS and Green Product requirement, 100% EAS g

0.37. Size:757K huashuo
hsba20n15s.pdf pdf_icon

0.38. Size:1289K cn vbsemi
vbzm120n15.pdf pdf_icon

VBZM120N15 www.VBsemi.com N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 150 Package with low thermal resistance RDS(on) ( ) at VGS = 10 V 0.075 100 % Rg and UIS tested ID (A) 20 Configuration Single Package TO-220 TO-220AB D G S S N-Channel MOSFET D G Top View S ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise n

0.39. Size:830K cn hmsemi
hm20n15a.pdf pdf_icon

HM20N15A N-Channel Enhancement Mode Power MOSFET Description The HM20N15A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A Schematic diagram RDS(ON)

0.40. Size:394K cn hmsemi
hm20n15.pdf pdf_icon

HM20N15 NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A RDS(ON)

0.41. Size:620K cn hmsemi
hm20n15ka.pdf pdf_icon

HM20N15KA N-Channel Enhancement Mode Power MOSFET Description The HM20N15KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A Schematic diagram RDS(ON)

0.42. Size:877K cn hmsemi
hm20n15d.pdf pdf_icon

HM20N15D N-Channel Enhancement Mode Power MOSFET Description The HM20N15D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =20A RDS(ON)

0.43. Size:517K cn hmsemi
hm20n15k.pdf pdf_icon

HM20N15K Description The HM20N15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A RDS(ON)

0.44. Size:494K cn hmsemi
hms20n15k.pdf pdf_icon

HMS20N15K N-Channel Super Trench Power MOSFET Description The HMS20N15K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectific

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