20N15 - описание и поиск аналогов

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 20N15 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V = 150V(Min) DSS Static Drain-Source On-Resistance R = 0.075 (Max) DS(on) Fast Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications in power supplies Mot

HSBA20N15S N-Ch 150V Fast Switching MOSFETs Description Product Summary VDS 150 V The HSBA20N15S is the highest performance trench N-ch MOSFETs with extreme high cell RDS(ON),max 56 m density, which provide excellent RDSON and gate charge for most of the synchronous buck ID 23 A converter applications. The HSBA20N15S meet the RoHS and Green Product requirement, 100% EA

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IXFH 120N15P VDSS = 150 V PolarHTTM HiPerFET IXFT 120N15P ID25 = 120 A Power MOSFET RDS(on) 16 m trr 200 ns N-Channel Enhancement Mode Avalanche Energy Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-247 (IXFH) VDSS TJ = 25 C to 175 C 150 V VDGR TJ = 25 C to 175 C; RGS = 1 M 150 V VDSS

High Voltage Power VDSS = 1500V IXTK20N150 MOSFETs w/ Extended ID25 = 20A IXTX20N150 FBSOA RDS(on)

IXTQ 120N15P VDSS = 150 V PolarHTTM IXTT 120N15P ID25 = 120 A Power MOSFET RDS(on) 16 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-3P (IXTQ) VDSS TJ = 25 C to 175 C 150 V VDGR TJ = 25 C to 175 C; RGS = 1 M 150 V VDSS Continuous 20 V VGSM Transient 30 V ID25 TC = 25 C 120 A G D

PolarTM Power MOSFET VDSS = 150V IXFK220N15P ID25 = 220A HiperFETTM IXFX220N15P RDS(on) 9m trr 200ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-264 (IXFK) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 175 C 150 V D S VDGR TJ = 25 C to 175 C, RGS = 1M 150 V Tab VGSS Conti

MCU20N15 Features Excellent Gate Charge x RDS(on) Product(FOM) Very Low On-Resistance RDS(on) Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-CHANNEL Halogen Free Available Upon Request By Adding Suffix "-HF" MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Ope

MCAC20N15 Electrical Characteristics @ 25 C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V(BR)DSS VGS=0V, ID=250 A Drain-Source Breakdown Voltage 150 V IGSS VDS=0V, VGS = 25V Gate-Source Leakage Current 100 nA IDSS VDS=120V, VGS=0V Zero Gate Voltage Drain Current 1 A VGS(th) VDS=VGS, ID=250 A Gate-Threshold Voltage 2

MTP20N15E Power MOSFET 20 Amps, 150 Volts N-Channel TO-220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also http //onsemi.com offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power converters 20 AMPERES and PWM motor controls, these dev

MTP20N15E Power MOSFET 20 Amps, 150 Volts N-Channel TO-220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also http //onsemi.com offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power converters 20 AMPERES and PWM motor controls, these dev

SSD20N15-250D N-Ch Enhancement Mode Power MOSFET 12A, 150V, RDS(ON) 255m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench TO-252(D-Pack) process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are

AP20N15AGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 150V Lower Gate Charge RDS(ON) 100m Fast Switching Characteristic ID 20.5A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the G D best combination of fast switching,

AP20N15GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 150V Lower Gate Charge RDS(ON) 100m Fast Switching Characteristic ID 20A G RoHS Compliant & Halogen-Free S Description G Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with the best combination of fast

AP20N15AGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 150V Lower Gate Charge RDS(ON) 100m Fast Switching Characteristic ID 20.5A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching,

AP20N15GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 150V Lower Gate Charge RDS(ON) 100m Fast Switching Characteristic ID 20A G RoHS Compliant & Halogen-Free S Description AP20N15 series are from Advanced Power innovated design and silicon G D S process technology to achieve

AP20N15AGI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 150V Lower Gate Charge RDS(ON) 100m Fast Switching Characteristic ID 20.5A G RoHS Compliant & Halogen-Free S Description AP20N15A series are from Advanced Power innovated design and silicon process technology to achieve the lo

AP20N15GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 150V Simple Drive Requirement RDS(ON) 100m Fast Switching Characteristic ID3 20A G RoHS Compliant & Halogen-Free S Description AP20N15 series are from Advanced Power innovated design and silicon process technology to achieve the low

AP20N15AGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 150V Lower Gate Charge RDS(ON) 100m Fast Switching Characteristic ID 20.5A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugged

AP20N15GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 150V D Single Drive Requirement RDS(ON) 100m Fast Switching Characteristic ID 20A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D TO-220CFM(I)

Analog Power AM20N15-250B N-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 200 @ VGS = 10V Low thermal impedance 150 21a 225 @ VGS = 5.5V Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIM

Analog Power AM20N15-250D N-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 255 @ VGS = 10V 12 Low thermal impedance 150 290 @ VGS = 4.5V 11 Fast switching speed Typical Applications PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost

Gre r r P Pr Pr Pro STU/D20N15 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Typ VDSS ID Rugged and reliable. 58 @ VGS=10V TO-252 and TO-251 Package. 150V 20A 65 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK

MOSFET e IC SMD Type SMD pe MOSFET DIP pe MOSFET SMD Type MOSFET DIP Type MOSFET SMDType C DIPTyType C SMDType IIC DIPTyType IIC SMDType SMDType Product specification KXP20N15 Features VDS (V) = 150V RDS(ON) 0.13 (VGS = 10V) 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage V

RU120N15R N-Channel Advanced Power MOSFET Features Pin Description 150V/120A RDS (ON)=15m (Typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available TO-220 Applications Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching N-Channel MOSFET A

RU120N15Q N-Channel Advanced Power MOSFET Features Pin Description 150V/120A RDS (ON)=15m (Typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available Applications TO-247 Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching N-Channel MOSFET A

ME20N15 / ME20N15-G N- Channel 150V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 90m @VGS=10V The ME20N15 is the N-Channel logic enhancement mode power RDS(ON) 110m @VGS=7V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially t

ME20N15F N- Channel 150V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 90m @VGS=10V The ME20N15F is the N-Channel logic enhancement mode power RDS(ON) 110m @VGS=7V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to

TGAN20N150FD Field Stop Trench IGBT Features TO 3PN 1500V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC Qualification E C G Applications Induction Heating, Inverterized Microwave Ovens, Soft Switching Appl

WMO20N15T2 150V N-Channel Enhancement Mode Power MOSFET Description WMO20N15T2 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. D Features S G V = 150V, I = 20A DS D TO-252 R

FIR20N15LG N-Channel Enhancement Mode Power Mosfet PIN Connection TO-252 Description The FIR20N15LG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A RDS(ON)

DAMH220N150 DACO SEMICONDUCTOR CO., LTD. N-Channel Enhancement Mode MOSFET Preliminary HB-9434 Features VDSS = 150V RDS(ON)

DAMI220N150 DACO SEMICONDUCTOR CO., LTD. N-Channel Enhancement Mode MOSFET Preliminary SOT-227 Features S VDSS = 150V G RDS(ON)

HSU20N15A N-Ch 150V Fast Switching MOSFETs Description Product Summary VDS 150 V The HSU20N15A is the highest performance trench N-ch MOSFETs with extreme high cell RDS(ON),typ 47 m density, which provide excellent RDSON and gate charge for most of the synchronous buck ID 23 A converter applications. The HSU20N15A meet the RoHS and Green Product requirement, 100% EAS g

HSBA20N15S N-Ch 150V Fast Switching MOSFETs Description Product Summary VDS 150 V The HSBA20N15S is the highest performance trench N-ch MOSFETs with extreme high cell RDS(ON),max 56 m density, which provide excellent RDSON and gate charge for most of the synchronous buck ID 23 A converter applications. The HSBA20N15S meet the RoHS and Green Product requirement, 100% EA

VBZM120N15 www.VBsemi.com N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 150 Package with low thermal resistance RDS(on) ( ) at VGS = 10 V 0.075 100 % Rg and UIS tested ID (A) 20 Configuration Single Package TO-220 TO-220AB D G S S N-Channel MOSFET D G Top View S ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise n

HM20N15A N-Channel Enhancement Mode Power MOSFET Description The HM20N15A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A Schematic diagram RDS(ON)

HM20N15 NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A RDS(ON)

HM20N15KA N-Channel Enhancement Mode Power MOSFET Description The HM20N15KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A Schematic diagram RDS(ON)

HM20N15D N-Channel Enhancement Mode Power MOSFET Description The HM20N15D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =20A RDS(ON)

HM20N15K Description The HM20N15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A RDS(ON)

HMS20N15K N-Channel Super Trench Power MOSFET Description The HMS20N15K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectific