20N15 Datasheet and Replacement

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 20N15FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 0.075(Max)DS(on)Fast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applications in power suppliesMot

HSBA20N15S N-Ch 150V Fast Switching MOSFETs Description Product Summary VDS 150 V The HSBA20N15S is the highest performance trench N-ch MOSFETs with extreme high cell RDS(ON),max 56 m density, which provide excellent RDSON and gate charge for most of the synchronous buck ID 23 A converter applications. The HSBA20N15S meet the RoHS and Green Product requirement, 100% EA

peBSZ520N15NS3 GTM 3 Power-TransistorProduct SummaryFeaturesV 1 D Q ) AD:>:J65 7@B 54 54 4@?F6BC:@?R m D n) m xQ ( 492??6= ?@B>2= =6F6=I 1 DQ H46==6?D 82D6 492B86 H R AB@5E4D ) ' D n)Q &@G @? B6C:CD2?46 RD n) G D ON Q T @A6B2D:?8 D6>A6B2DEB6Q *3 7B66 =625 A=2D:?8 , @"- 4@>A=:2?D1)Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?Q "2=@86? 7B6

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IXFH 120N15P VDSS = 150 VPolarHTTM HiPerFETIXFT 120N15P ID25 = 120 APower MOSFET RDS(on) 16 m trr 200 nsN-Channel Enhancement Mode Avalanche Energy RatedFast Intrinsic DiodeSymbol Test Conditions Maximum RatingsTO-247 (IXFH)VDSS TJ = 25 C to 175 C 150 VVDGR TJ = 25 C to 175 C; RGS = 1 M 150 VVDSS

High Voltage PowerVDSS = 1500VIXTK20N150MOSFETs w/ ExtendedID25 = 20AIXTX20N150FBSOARDS(on)

IXTQ 120N15P VDSS = 150 VPolarHTTMIXTT 120N15P ID25 = 120 APower MOSFET RDS(on) 16 m N-Channel Enhancement ModeAvalanche RatedSymbol Test Conditions Maximum RatingsTO-3P (IXTQ)VDSS TJ = 25 C to 175 C 150 VVDGR TJ = 25 C to 175 C; RGS = 1 M 150 VVDSS Continuous 20 VVGSM Transient 30 VID25 TC = 25 C 120 A GD

PolarTM Power MOSFET VDSS = 150VIXFK220N15PID25 = 220AHiperFETTMIXFX220N15P RDS(on) 9m trr 200nsN-Channel Enhancement ModeAvalanche RatedFast Intrinsic RectifierTO-264 (IXFK)Symbol Test Conditions Maximum RatingsGVDSS TJ = 25C to 175C 150 V DSVDGR TJ = 25C to 175C, RGS = 1M 150 VTabVGSS Conti

MCU20N15Features Excellent Gate Charge x RDS(on) Product(FOM) Very Low On-Resistance RDS(on) Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-CHANNEL Halogen Free Available Upon Request By Adding Suffix "-HF"MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Maximum RatingsOpe

MCAC20N15Electrical Characteristics @ 25C (Unless Otherwise Specified)Parameter Symbol Test Conditions Min Typ Max UnitStatic CharacteristicsV(BR)DSS VGS=0V, ID=250ADrain-Source Breakdown Voltage 150 VIGSS VDS=0V, VGS =25VGate-Source Leakage Current 100 nAIDSS VDS=120V, VGS=0VZero Gate Voltage Drain Current 1 AVGS(th) VDS=VGS, ID=250AGate-Threshold Voltage 2

MTP20N15EPower MOSFET20 Amps, 150 VoltsN-Channel TO-220This Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. The energy efficient design alsohttp://onsemi.comoffers a drain-to-source diode with a fast recovery time. Designed forlow voltage, high speed switching applications in power converters20 AMPERESand PWM motor controls, these dev

MTP20N15EPower MOSFET20 Amps, 150 VoltsN-Channel TO-220This Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. The energy efficient design alsohttp://onsemi.comoffers a drain-to-source diode with a fast recovery time. Designed forlow voltage, high speed switching applications in power converters20 AMPERESand PWM motor controls, these dev

SSD20N15-250D N-Ch Enhancement Mode Power MOSFET 12A, 150V, RDS(ON) 255m Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench TO-252(D-Pack)process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are

AP20N15AGH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 150V Lower Gate Charge RDS(ON) 100m Fast Switching Characteristic ID 20.5AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGDbest combination of fast switching,

AP20N15GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 150V Lower Gate Charge RDS(ON) 100m Fast Switching Characteristic ID 20AG RoHS Compliant & Halogen-FreeSDescriptionGAdvanced Power MOSFETs from APEC provide theDS TO-252(H)designer with the best combination of fast

AP20N15AGH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 150V Lower Gate Charge RDS(ON) 100m Fast Switching Characteristic ID 20.5AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,

AP20N15GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 150V Lower Gate Charge RDS(ON) 100m Fast Switching Characteristic ID 20AG RoHS Compliant & Halogen-FreeSDescriptionAP20N15 series are from Advanced Power innovated design and siliconGDSprocess technology to achieve

AP20N15AGI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 150V Lower Gate Charge RDS(ON) 100m Fast Switching Characteristic ID 20.5AG RoHS Compliant & Halogen-FreeSDescriptionAP20N15A series are from Advanced Power innovated design andsilicon process technology to achieve the lo

AP20N15GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 150V Simple Drive Requirement RDS(ON) 100m Fast Switching Characteristic ID3 20AG RoHS Compliant & Halogen-FreeSDescriptionAP20N15 series are from Advanced Power innovated design andsilicon process technology to achieve the low

AP20N15AGP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 150V Lower Gate Charge RDS(ON) 100m Fast Switching Characteristic ID 20.5AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, rugged

AP20N15GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 150VD Single Drive Requirement RDS(ON) 100m Fast Switching Characteristic ID 20AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDTO-220CFM(I)

Analog Power AM20N15-250BN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)200 @ VGS = 10V Low thermal impedance 15021a225 @ VGS = 5.5V Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIM

Analog Power AM20N15-250DN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)255 @ VGS = 10V12 Low thermal impedance 150290 @ VGS = 4.5V11 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED boost

GrerrPPrPrProSTU/D20N15aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) TypVDSS IDRugged and reliable.58 @ VGS=10VTO-252 and TO-251 Package.150V 20A65 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK

MOSFETe ICSMD TypeSMD pe MOSFETDIP pe MOSFETSMD Type MOSFETDIP Type MOSFETSMDType CDIPTyType CSMDType IICDIPTyType IICSMDTypeSMDTypeProduct specificationKXP20N15 Features VDS (V) = 150V RDS(ON) 0.13 (VGS = 10V)1 Gate2 Drain3 Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage V

RU120N15R N-Channel Advanced Power MOSFET Features Pin Description 150V/120A RDS (ON)=15m(Typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available TO-220 Applications Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching N-Channel MOSFET A

RU120N15Q N-Channel Advanced Power MOSFET Features Pin Description 150V/120A RDS (ON)=15m(Typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available Applications TO-247 Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching N-Channel MOSFET A

ME20N15 / ME20N15-G N- Channel 150V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)90m@VGS=10V The ME20N15 is the N-Channel logic enhancement mode power RDS(ON)110m@VGS=7V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially t

ME20N15F N- Channel 150V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)90m@VGS=10V The ME20N15F is the N-Channel logic enhancement mode power RDS(ON)110m@VGS=7V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to

TGAN20N150FDField Stop Trench IGBTFeaturesTO 3PN 1500V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC QualificationECGApplications Induction Heating, Inverterized Microwave Ovens, Soft Switching Appl

WMO20N15T2 150V N-Channel Enhancement Mode Power MOSFET DescriptionWMO20N15T2 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DFeatures SG V = 150V, I = 20A DS DTO-252R

FIR20N15LGN-Channel Enhancement Mode Power MosfetPIN Connection TO-252Description The FIR20N15LG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A RDS(ON)

DAMH220N150DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETPreliminaryHB-9434Features VDSS = 150V RDS(ON)

DAMI220N150DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETPreliminary SOT-227FeaturesS VDSS = 150V G RDS(ON)

HSU20N15A N-Ch 150V Fast Switching MOSFETs Description Product Summary VDS 150 V The HSU20N15A is the highest performance trench N-ch MOSFETs with extreme high cell RDS(ON),typ 47 m density, which provide excellent RDSON and gate charge for most of the synchronous buck ID 23 A converter applications. The HSU20N15A meet the RoHS and Green Product requirement, 100% EAS g

HSBA20N15S N-Ch 150V Fast Switching MOSFETs Description Product Summary VDS 150 V The HSBA20N15S is the highest performance trench N-ch MOSFETs with extreme high cell RDS(ON),max 56 m density, which provide excellent RDSON and gate charge for most of the synchronous buck ID 23 A converter applications. The HSBA20N15S meet the RoHS and Green Product requirement, 100% EA

VBZM120N15www.VBsemi.comN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 150 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.075 100 % Rg and UIS testedID (A) 20Configuration SinglePackage TO-220TO-220ABDGSSN-Channel MOSFETDGTop ViewSABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise n

HM20N15AN-Channel Enhancement Mode Power MOSFET Description The HM20N15A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A Schematic diagram RDS(ON)

HM20N15NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A RDS(ON)

HM20N15KAN-Channel Enhancement Mode Power MOSFET Description The HM20N15KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A Schematic diagram RDS(ON)

HM20N15DN-Channel Enhancement Mode Power MOSFET Description The HM20N15D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =20A RDS(ON)

HM20N15KDescription The HM20N15K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A RDS(ON)

HMS20N15KN-Channel Super Trench Power MOSFET Description The HMS20N15K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectific