IPP030N10N3 Todos los transistores

 ..1. Size:245K  inchange semiconductor
 ipp030n10n3.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP030N10N3 IIPP030N10N3 FEATURES Static drain-source on-resistance RDS(on) 3m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE M

 0.1. Size:575K  infineon
 ipp030n10n3g.pdf

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 0.2. Size:536K  infineon
 ipi030n10n3g ipp030n10n3g ipp030n10n3g ipi030n10n3g.pdf

IPP030N10N3 G IPI030N10N3 G OptiMOS 3 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max 3 mW Excellent gate charge x R product (FOM) DS(on) ID 100 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for h

 4.1. Size:1820K  infineon
 ipp030n10n5.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 100 V IPP030N10N5 Data Sheet Rev. 2.1 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 100 V IPP030N10N5 TO-220-3 1 Description tab Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-re

 4.2. Size:245K  inchange semiconductor
 ipp030n10n5.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP030N10N5 IIPP030N10N5 FEATURES Static drain-source on-resistance RDS(on) 3.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE