IPP030N10N3 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPP030N10N3
Marking Code: 030N10N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 300 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
Maximum Drain Current |Id|: 100 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 155 nC
Rise Time (tr): 58 nS
Drain-Source Capacitance (Cd): 1940 pF
Maximum Drain-Source On-State Resistance (Rds): 0.003 Ohm
Package: TO220
IPP030N10N3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPP030N10N3 Datasheet (PDF)
ipp030n10n3.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP030N10N3IIPP030N10N3FEATURESStatic drain-source on-resistance:RDS(on) 3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE M
ipp030n10n3g.pdf
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ipi030n10n3g ipp030n10n3g ipp030n10n3g ipi030n10n3g.pdf
IPP030N10N3 G IPI030N10N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesVDS 100 V N-channel, normal levelRDS(on),max 3mW Excellent gate charge x R product (FOM)DS(on)ID 100 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for h
ipp030n10n5.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS5 Power-Transistor, 100 VIPP030N10N5Data SheetRev. 2.1FinalPower Management & MultimarketOptiMOS5 Power-Transistor, 100 VIPP030N10N5TO-220-31 DescriptiontabFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-re
ipp030n10n5.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP030N10N5IIPP030N10N5FEATURESStatic drain-source on-resistance:RDS(on) 3.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE
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