IPP030N10N3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IPP030N10N3
Маркировка: 030N10N
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 300 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3.5 V
Максимально допустимый постоянный ток стока |Id|: 100 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 155 nC
Время нарастания (tr): 58 ns
Выходная емкость (Cd): 1940 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.003 Ohm
Тип корпуса: TO220
Аналог (замена) для IPP030N10N3
IPP030N10N3 Datasheet (PDF)
ipp030n10n3.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP030N10N3IIPP030N10N3FEATURESStatic drain-source on-resistance:RDS(on) 3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE M
ipp030n10n3g.pdf
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ipi030n10n3g ipp030n10n3g ipp030n10n3g ipi030n10n3g.pdf
IPP030N10N3 G IPI030N10N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesVDS 100 V N-channel, normal levelRDS(on),max 3mW Excellent gate charge x R product (FOM)DS(on)ID 100 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for h
ipp030n10n5.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS5 Power-Transistor, 100 VIPP030N10N5Data SheetRev. 2.1FinalPower Management & MultimarketOptiMOS5 Power-Transistor, 100 VIPP030N10N5TO-220-31 DescriptiontabFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-re
ipp030n10n5.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP030N10N5IIPP030N10N5FEATURESStatic drain-source on-resistance:RDS(on) 3.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
