IRF60B217 Todos los transistores

 ..1. Size:227K  infineon
 irf60b217.pdf

 ..2. Size:246K  inchange semiconductor
 irf60b217.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF60B217 IIRF60B217 FEATURES Static drain-source on-resistance RDS(on) 9.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAX

 9.1. Size:524K  international rectifier
 irf60dm206.pdf

 9.2. Size:470K  infineon
 irf60r217.pdf

IR MOSFET StrongIRFET IRF60R217 Application D VDSS 60V Brushed Motor drive applications BLDC Motor drive applications RDS(on) typ. 8.0m Battery powered circuits G Half-bridge and full-bridge topologies max 9.9m Synchronous rectifier applications S ID 58A Resonant mode power supplies OR-ing and redunda

 9.3. Size:242K  inchange semiconductor
 irf60r217.pdf

isc N-Channel MOSFET Transistor IRF60R217, IIRF60R217 FEATURES Static drain-source on-resistance RDS(on) 9.9m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Synchronous rectifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol