IRF60B217 MOSFET Datasheet: N-Ch, 60V, 60A. Full specification with pinout and replacement list

IRF60B217 Specs and Replacement

Type Designator: IRF60B217

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 37 nS

Cossⓘ - Output Capacitance: 215 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO220AB

IRF60B217 substitution

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IRF60B217 datasheet

..1. Size:227K infineon
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..2. Size:246K inchange semiconductor
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INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF60B217 IIRF60B217 FEATURES Static drain-source on-resistance RDS(on) 9.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAX... See More ⇒

9.1. Size:524K international rectifier
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9.2. Size:470K infineon
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IR MOSFET StrongIRFET IRF60R217 Application D VDSS 60V Brushed Motor drive applications BLDC Motor drive applications RDS(on) typ. 8.0m Battery powered circuits G Half-bridge and full-bridge topologies max 9.9m Synchronous rectifier applications S ID 58A Resonant mode power supplies OR-ing and redunda... See More ⇒