IRFP7718 Todos los transistores

 

IRFP7718 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFP7718
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 517 W
   Voltaje máximo drenador - fuente |Vds|: 75 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 195 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 3.7 V
   Carga de la puerta (Qg): 552 nC
   Tiempo de subida (tr): 164 nS
   Conductancia de drenaje-sustrato (Cd): 2270 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0018 Ohm
   Paquete / Cubierta: TO247

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IRFP7718 Datasheet (PDF)

 ..1. Size:555K  international rectifier
irfp7718pbf.pdf

IRFP7718 IRFP7718

StrongIRFET IRFP7718PbF Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications VDSS 75V DBattery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 1.45m Synchronous rectifier applications 1.80mG max Resonant mode power supplies ID (Silicon Limited)

 ..2. Size:242K  inchange semiconductor
irfp7718.pdf

IRFP7718 IRFP7718

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP7718IIRFP7718FEATURESStatic drain-source on-resistance:RDS(on)1.8mEnhancement mode:Vth =2.0 to 4.0 V (VDS=VGS, ID=250A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous RectificationABSOLUTE MAXIMUM RATINGS(T =25

 9.1. Size:540K  international rectifier
irfp7530pbf.pdf

IRFP7718 IRFP7718

StrongIRFET IRFP7530PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 1.65m Half-bridge and full-bridge topologies max 2.00mG Synchronous rectifier applications ID (Silicon Limited) 281A Resonant mode power sup

 9.2. Size:257K  international rectifier
irfp7430pbf.pdf

IRFP7718 IRFP7718

StrongIRFETTMIRFP7430PbFApplicationsHEXFET Power MOSFETl Brushed Motor drive applicationsl BLDC Motor drive applicationsDVDSS 40Vl Battery powered circuitsRDS(on) typ. 1.0ml Half-bridge and full-bridge topologies max. 1.3ml Synchronous rectifier applicationsGl Resonant mode power suppliesID (Silicon Limited) 404Al OR-ing and redundant power switchesSID

 9.3. Size:538K  international rectifier
irfp7537pbf.pdf

IRFP7718 IRFP7718

StrongIRFET IRFP7537PbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 60V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 2.75m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.30m Resonant mode power supplies S OR-ing and re

 9.4. Size:540K  infineon
irfp7530pbf.pdf

IRFP7718 IRFP7718

StrongIRFET IRFP7530PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 1.65m Half-bridge and full-bridge topologies max 2.00mG Synchronous rectifier applications ID (Silicon Limited) 281A Resonant mode power sup

 9.5. Size:257K  infineon
irfp7430pbf.pdf

IRFP7718 IRFP7718

StrongIRFETTMIRFP7430PbFApplicationsHEXFET Power MOSFETl Brushed Motor drive applicationsl BLDC Motor drive applicationsDVDSS 40Vl Battery powered circuitsRDS(on) typ. 1.0ml Half-bridge and full-bridge topologies max. 1.3ml Synchronous rectifier applicationsGl Resonant mode power suppliesID (Silicon Limited) 404Al OR-ing and redundant power switchesSID

 9.6. Size:538K  infineon
irfp7537pbf.pdf

IRFP7718 IRFP7718

StrongIRFET IRFP7537PbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 60V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 2.75m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.30m Resonant mode power supplies S OR-ing and re

 9.7. Size:247K  inchange semiconductor
irfp7537.pdf

IRFP7718 IRFP7718

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP7537IIRFP7537FEATURESStatic drain-source on-resistance:RDS(on)3.3mEnhancement mode:Vth =2.1 to 3.7 V (VDS=VGS, ID=150A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous RectificationABSOLUTE MAXIMUM RATINGS(T =25

 9.8. Size:242K  inchange semiconductor
irfp7530.pdf

IRFP7718 IRFP7718

isc N-Channel MOSFET Transistor IRFP7530IIRFP7530FEATURESStatic drain-source on-resistance:RDS(on) 2mEnhancement mode:Vth =2.1 to 3.7V (VDS=VGS, ID=250A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous RectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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