IRFP7718
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFP7718
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 517
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.7
V
|Id|ⓘ - Maximum Drain Current: 195
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 552
nC
trⓘ - Rise Time: 164
nS
Cossⓘ -
Output Capacitance: 2270
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0018
Ohm
Package:
TO247
IRFP7718
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFP7718
Datasheet (PDF)
..1. Size:555K international rectifier
irfp7718pbf.pdf 
StrongIRFET IRFP7718PbF Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications VDSS 75V DBattery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 1.45m Synchronous rectifier applications 1.80mG max Resonant mode power supplies ID (Silicon Limited)
..2. Size:242K inchange semiconductor
irfp7718.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP7718IIRFP7718FEATURESStatic drain-source on-resistance:RDS(on)1.8mEnhancement mode:Vth =2.0 to 4.0 V (VDS=VGS, ID=250A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous RectificationABSOLUTE MAXIMUM RATINGS(T =25
9.1. Size:540K international rectifier
irfp7530pbf.pdf
StrongIRFET IRFP7530PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 1.65m Half-bridge and full-bridge topologies max 2.00mG Synchronous rectifier applications ID (Silicon Limited) 281A Resonant mode power sup
9.2. Size:257K international rectifier
irfp7430pbf.pdf
StrongIRFETTMIRFP7430PbFApplicationsHEXFET Power MOSFETl Brushed Motor drive applicationsl BLDC Motor drive applicationsDVDSS 40Vl Battery powered circuitsRDS(on) typ. 1.0ml Half-bridge and full-bridge topologies max. 1.3ml Synchronous rectifier applicationsGl Resonant mode power suppliesID (Silicon Limited) 404Al OR-ing and redundant power switchesSID
9.3. Size:538K international rectifier
irfp7537pbf.pdf
StrongIRFET IRFP7537PbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 60V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 2.75m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.30m Resonant mode power supplies S OR-ing and re
9.4. Size:540K infineon
irfp7530pbf.pdf
StrongIRFET IRFP7530PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 1.65m Half-bridge and full-bridge topologies max 2.00mG Synchronous rectifier applications ID (Silicon Limited) 281A Resonant mode power sup
9.5. Size:257K infineon
irfp7430pbf.pdf
StrongIRFETTMIRFP7430PbFApplicationsHEXFET Power MOSFETl Brushed Motor drive applicationsl BLDC Motor drive applicationsDVDSS 40Vl Battery powered circuitsRDS(on) typ. 1.0ml Half-bridge and full-bridge topologies max. 1.3ml Synchronous rectifier applicationsGl Resonant mode power suppliesID (Silicon Limited) 404Al OR-ing and redundant power switchesSID
9.6. Size:538K infineon
irfp7537pbf.pdf
StrongIRFET IRFP7537PbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 60V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 2.75m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.30m Resonant mode power supplies S OR-ing and re
9.7. Size:247K inchange semiconductor
irfp7537.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP7537IIRFP7537FEATURESStatic drain-source on-resistance:RDS(on)3.3mEnhancement mode:Vth =2.1 to 3.7 V (VDS=VGS, ID=150A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous RectificationABSOLUTE MAXIMUM RATINGS(T =25
9.8. Size:242K inchange semiconductor
irfp7530.pdf
isc N-Channel MOSFET Transistor IRFP7530IIRFP7530FEATURESStatic drain-source on-resistance:RDS(on) 2mEnhancement mode:Vth =2.1 to 3.7V (VDS=VGS, ID=250A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous RectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA
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