Справочник MOSFET. IRFP7718

 

IRFP7718 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRFP7718
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 517 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 75 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 195 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 164 ns
   Cossⓘ - Выходная емкость: 2270 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0018 Ohm
   Тип корпуса: TO247

 Аналог (замена) для IRFP7718

 

 

IRFP7718 Datasheet (PDF)

 ..1. Size:555K  international rectifier
 irfp7718pbf.pdf

IRFP7718 IRFP7718

StrongIRFET IRFP7718PbF Application HEXFET Power MOSFET Brushed Motor drive applications BLDC Motor drive applications VDSS 75V DBattery powered circuits Half-bridge and full-bridge topologies RDS(on) typ. 1.45m Synchronous rectifier applications 1.80mG max Resonant mode power supplies ID (Silicon Limited)

 ..2. Size:242K  inchange semiconductor
 irfp7718.pdf

IRFP7718 IRFP7718

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP7718IIRFP7718FEATURESStatic drain-source on-resistance:RDS(on)1.8mEnhancement mode:Vth =2.0 to 4.0 V (VDS=VGS, ID=250A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous RectificationABSOLUTE MAXIMUM RATINGS(T =25

 9.1. Size:540K  international rectifier
 irfp7530pbf.pdf

IRFP7718 IRFP7718

StrongIRFET IRFP7530PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 1.65m Half-bridge and full-bridge topologies max 2.00mG Synchronous rectifier applications ID (Silicon Limited) 281A Resonant mode power sup

 9.2. Size:257K  international rectifier
 irfp7430pbf.pdf

IRFP7718 IRFP7718

StrongIRFETTMIRFP7430PbFApplicationsHEXFET Power MOSFETl Brushed Motor drive applicationsl BLDC Motor drive applicationsDVDSS 40Vl Battery powered circuitsRDS(on) typ. 1.0ml Half-bridge and full-bridge topologies max. 1.3ml Synchronous rectifier applicationsGl Resonant mode power suppliesID (Silicon Limited) 404Al OR-ing and redundant power switchesSID

 9.3. Size:538K  international rectifier
 irfp7537pbf.pdf

IRFP7718 IRFP7718

StrongIRFET IRFP7537PbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 60V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 2.75m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.30m Resonant mode power supplies S OR-ing and re

 9.4. Size:540K  infineon
 irfp7530pbf.pdf

IRFP7718 IRFP7718

StrongIRFET IRFP7530PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 60V D BLDC Motor drive applications Battery powered circuits RDS(on) typ. 1.65m Half-bridge and full-bridge topologies max 2.00mG Synchronous rectifier applications ID (Silicon Limited) 281A Resonant mode power sup

 9.5. Size:257K  infineon
 irfp7430pbf.pdf

IRFP7718 IRFP7718

StrongIRFETTMIRFP7430PbFApplicationsHEXFET Power MOSFETl Brushed Motor drive applicationsl BLDC Motor drive applicationsDVDSS 40Vl Battery powered circuitsRDS(on) typ. 1.0ml Half-bridge and full-bridge topologies max. 1.3ml Synchronous rectifier applicationsGl Resonant mode power suppliesID (Silicon Limited) 404Al OR-ing and redundant power switchesSID

 9.6. Size:538K  infineon
 irfp7537pbf.pdf

IRFP7718 IRFP7718

StrongIRFET IRFP7537PbF HEXFET Power MOSFET Application Brushed Motor drive applications D VDSS 60V BLDC Motor drive applications Battery powered circuits RDS(on) typ. 2.75m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.30m Resonant mode power supplies S OR-ing and re

 9.7. Size:247K  inchange semiconductor
 irfp7537.pdf

IRFP7718 IRFP7718

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP7537IIRFP7537FEATURESStatic drain-source on-resistance:RDS(on)3.3mEnhancement mode:Vth =2.1 to 3.7 V (VDS=VGS, ID=150A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous RectificationABSOLUTE MAXIMUM RATINGS(T =25

 9.8. Size:242K  inchange semiconductor
 irfp7530.pdf

IRFP7718 IRFP7718

isc N-Channel MOSFET Transistor IRFP7530IIRFP7530FEATURESStatic drain-source on-resistance:RDS(on) 2mEnhancement mode:Vth =2.1 to 3.7V (VDS=VGS, ID=250A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous RectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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