IRL40B215 Todos los transistores

 

IRL40B215 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRL40B215
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 143 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 110 nS
   Cossⓘ - Capacitancia de salida: 651 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0027 Ohm
   Paquete / Cubierta: TO220AB
     - Selección de transistores por parámetros

 

IRL40B215 Datasheet (PDF)

 ..1. Size:542K  international rectifier
irl40b215.pdf pdf_icon

IRL40B215

StrongIRFET IRL40B215 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V D BLDC Motor drive applications RDS(on) typ. 2.2mBattery powered circuits max 2.7m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 164A Resonant mode power suppli

 ..2. Size:246K  inchange semiconductor
irl40b215.pdf pdf_icon

IRL40B215

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL40B215IIRL40B215FEATURESStatic drain-source on-resistance:RDS(on) 2.7mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIM

 6.1. Size:618K  international rectifier
irl40b212 irl40s212.pdf pdf_icon

IRL40B215

StrongIRFET IRL40B212 IRL40S212 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications DBattery powered circuits RDS(on) typ. 1.5m Half-bridge and full-bridge topologies max 1.9m Synchronous rectifier applications GID (Silicon Limited) 254A Resonant mode powe

 6.2. Size:245K  inchange semiconductor
irl40b212.pdf pdf_icon

IRL40B215

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL40B212IIRL40B212FEATURESStatic drain-source on-resistance:RDS(on) 1.9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIM

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: R6004JNX | SIHFIB6N60A | TMAN7N90 | CMT04N60GN252 | NTR4501NT1 | IRHMK57260SE | CHM1024VGP

 

 
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