IRL40B215 Todos los transistores

 

IRL40B215 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRL40B215

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 143 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 110 nS

Cossⓘ - Capacitancia de salida: 651 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0027 Ohm

Encapsulados: TO220AB

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IRL40B215 datasheet

 ..1. Size:542K  international rectifier
irl40b215.pdf pdf_icon

IRL40B215

StrongIRFET IRL40B215 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V D BLDC Motor drive applications RDS(on) typ. 2.2m Battery powered circuits max 2.7m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 164A Resonant mode power suppli

 ..2. Size:246K  inchange semiconductor
irl40b215.pdf pdf_icon

IRL40B215

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRL40B215 IIRL40B215 FEATURES Static drain-source on-resistance RDS(on) 2.7m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIM

 6.1. Size:618K  international rectifier
irl40b212 irl40s212.pdf pdf_icon

IRL40B215

StrongIRFET IRL40B212 IRL40S212 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications D Battery powered circuits RDS(on) typ. 1.5m Half-bridge and full-bridge topologies max 1.9m Synchronous rectifier applications G ID (Silicon Limited) 254A Resonant mode powe

 6.2. Size:245K  inchange semiconductor
irl40b212.pdf pdf_icon

IRL40B215

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRL40B212 IIRL40B212 FEATURES Static drain-source on-resistance RDS(on) 1.9m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIM

Otros transistores... IRF250P225 , IRF60B217 , IRF630NSTRRPBF , IRFP4127 , IRFP4868 , IRFP7537 , IRFP7718 , IRL40B212 , IRF740 , IRL60B216 , IRL8114 , TK10A50W , TK10A60D5 , TK10A80W , TK10E80W , TK12A50D5 , TK12A50W .

 

 

 


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