IRL40B215 PDF and Equivalents Search

 

IRL40B215 Specs and Replacement

Type Designator: IRL40B215

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 143 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 110 nS

Cossⓘ - Output Capacitance: 651 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0027 Ohm

Package: TO220AB

IRL40B215 substitution

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IRL40B215 datasheet

 ..1. Size:542K  international rectifier
irl40b215.pdf pdf_icon

IRL40B215

StrongIRFET IRL40B215 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V D BLDC Motor drive applications RDS(on) typ. 2.2m Battery powered circuits max 2.7m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 164A Resonant mode power suppli... See More ⇒

 ..2. Size:246K  inchange semiconductor
irl40b215.pdf pdf_icon

IRL40B215

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRL40B215 IIRL40B215 FEATURES Static drain-source on-resistance RDS(on) 2.7m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIM... See More ⇒

 6.1. Size:618K  international rectifier
irl40b212 irl40s212.pdf pdf_icon

IRL40B215

StrongIRFET IRL40B212 IRL40S212 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications D Battery powered circuits RDS(on) typ. 1.5m Half-bridge and full-bridge topologies max 1.9m Synchronous rectifier applications G ID (Silicon Limited) 254A Resonant mode powe... See More ⇒

 6.2. Size:245K  inchange semiconductor
irl40b212.pdf pdf_icon

IRL40B215

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRL40B212 IIRL40B212 FEATURES Static drain-source on-resistance RDS(on) 1.9m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIM... See More ⇒

Detailed specifications: IRF250P225, IRF60B217, IRF630NSTRRPBF, IRFP4127, IRFP4868, IRFP7537, IRFP7718, IRL40B212, IRF740, IRL60B216, IRL8114, TK10A50W, TK10A60D5, TK10A80W, TK10E80W, TK12A50D5, TK12A50W

Keywords - IRL40B215 MOSFET specs

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