IRL40B215 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRL40B215
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 143 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.4 V
Максимально допустимый постоянный ток стока |Id|: 120 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 56 nC
Время нарастания (tr): 110 ns
Выходная емкость (Cd): 651 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0027 Ohm
Тип корпуса: TO220AB
IRL40B215 Datasheet (PDF)
irl40b215.pdf
StrongIRFET IRL40B215 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V D BLDC Motor drive applications RDS(on) typ. 2.2mBattery powered circuits max 2.7m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 164A Resonant mode power suppli
irl40b215.pdf
StrongIRFET IRL40B215 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V D BLDC Motor drive applications RDS(on) typ. 2.2mBattery powered circuits max 2.7m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 164A Resonant mode power suppli
irl40b215.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL40B215IIRL40B215FEATURESStatic drain-source on-resistance:RDS(on) 2.7mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIM
irl40b212 irl40s212.pdf
StrongIRFET IRL40B212 IRL40S212 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications DBattery powered circuits RDS(on) typ. 1.5m Half-bridge and full-bridge topologies max 1.9m Synchronous rectifier applications GID (Silicon Limited) 254A Resonant mode powe
irl40b212 irl40s212.pdf
StrongIRFET IRL40B212 IRL40S212 HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications DBattery powered circuits RDS(on) typ. 1.5m Half-bridge and full-bridge topologies max 1.9m Synchronous rectifier applications GID (Silicon Limited) 254A Resonant mode powe
irl40b212.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL40B212IIRL40B212FEATURESStatic drain-source on-resistance:RDS(on) 1.9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIM
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