IRL8114 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRL8114PbF HEXFET Power MOSFET Application Optimized for UPS/Inverter Applications VDSS 30V D Low Voltage Power Tools RDS(on) typ. 3.5m max 4.5mGBenefits ID (Silicon Limited) 120A Low RDS(on) at 4.5V VGS S Low Gate Charge ID (Package Limited) 90A Fully Characterized Capacitance and Avalanche SOA Lead-Free

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL8114IIRL8114FEATURESStatic drain-source on-resistance:RDS(on) 4.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R

PD - 95582IRL8113PbFIRL8113SPbFIRL8113LPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor PowerVDSS RDS(on) maxQg (Typ.)l Lead-Free30V 6.0m 23nCBenefitsl Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltageand CurrentTO-220AB D2Pak TO-262IRL8113 IRL8113S IRL8113LAbsolute Maximum

isc N-Channel MOSFET Transistor IRL8113SDESCRIPTIONStatic drain-source on-resistance:RDS(on) 6m@V = 10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Provides the designer with an extremely efficient andreliable device for use in a wide variety of applications.ABSOLUTE MAXIMUM RATINGS(

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL8113IIRL8113FEATURESStatic drain-source on-resistance:RDS(on) 6.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R