IRL8114 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IRL8114 datasheet

..1. Size:423K international rectifier
irl8114pbf.pdf pdf_icon

IRL8114PbF HEXFET Power MOSFET Application Optimized for UPS/Inverter Applications VDSS 30V D Low Voltage Power Tools RDS(on) typ. 3.5m max 4.5m G Benefits ID (Silicon Limited) 120A Low RDS(on) at 4.5V VGS S Low Gate Charge ID (Package Limited) 90A Fully Characterized Capacitance and Avalanche SOA Lead-Free

..2. Size:246K inchange semiconductor
irl8114.pdf pdf_icon

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRL8114 IIRL8114 FEATURES Static drain-source on-resistance RDS(on) 4.5m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM R

8.1. Size:279K international rectifier
irl8113lpbf irl8113spbf irl8113pbf.pdf pdf_icon

PD - 95582 IRL8113PbF IRL8113SPbF IRL8113LPbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck Converters for Computer Processor Power VDSS RDS(on) max Qg (Typ.) l Lead-Free 30V 6.0m 23nC Benefits l Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current TO-220AB D2Pak TO-262 IRL8113 IRL8113S IRL8113L Absolute Maximum

8.2. Size:269K inchange semiconductor
irl8113s.pdf pdf_icon

isc N-Channel MOSFET Transistor IRL8113S DESCRIPTION Static drain-source on-resistance RDS(on) 6m @V = 10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . Provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. ABSOLUTE MAXIMUM RATINGS(