IRL8114
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRL8114
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 115
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.25
V
|Id|ⓘ - Maximum Drain Current: 90
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 19
nC
trⓘ - Rise Time: 103
nS
Cossⓘ -
Output Capacitance: 600
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045
Ohm
Package:
TO220AB
IRL8114
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRL8114
Datasheet (PDF)
..1. Size:423K international rectifier
irl8114pbf.pdf 
IRL8114PbF HEXFET Power MOSFET Application Optimized for UPS/Inverter Applications VDSS 30V D Low Voltage Power Tools RDS(on) typ. 3.5m max 4.5mGBenefits ID (Silicon Limited) 120A Low RDS(on) at 4.5V VGS S Low Gate Charge ID (Package Limited) 90A Fully Characterized Capacitance and Avalanche SOA Lead-Free
..2. Size:246K inchange semiconductor
irl8114.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL8114IIRL8114FEATURESStatic drain-source on-resistance:RDS(on) 4.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R
8.1. Size:279K international rectifier
irl8113lpbf irl8113spbf irl8113pbf.pdf
PD - 95582IRL8113PbFIRL8113SPbFIRL8113LPbFApplicationsHEXFET Power MOSFETl High Frequency Synchronous BuckConverters for Computer Processor PowerVDSS RDS(on) maxQg (Typ.)l Lead-Free30V 6.0m 23nCBenefitsl Low RDS(on) at 4.5V VGSl Low Gate Chargel Fully Characterized Avalanche Voltageand CurrentTO-220AB D2Pak TO-262IRL8113 IRL8113S IRL8113LAbsolute Maximum
8.2. Size:269K inchange semiconductor
irl8113s.pdf
isc N-Channel MOSFET Transistor IRL8113SDESCRIPTIONStatic drain-source on-resistance:RDS(on) 6m@V = 10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Provides the designer with an extremely efficient andreliable device for use in a wide variety of applications.ABSOLUTE MAXIMUM RATINGS(
8.3. Size:245K inchange semiconductor
irl8113.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRL8113IIRL8113FEATURESStatic drain-source on-resistance:RDS(on) 6.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R
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