TK10E80W Todos los transistores

 

TK10E80W MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TK10E80W

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 130 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 9.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35 nS

Cossⓘ - Capacitancia de salida: 27 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.55 Ohm

Encapsulados: TO220

 Búsqueda de reemplazo de TK10E80W MOSFET

- Selecciónⓘ de transistores por parámetros

 

TK10E80W datasheet

 ..1. Size:421K  toshiba
 tk10e80w.pdf pdf_icon

TK10E80W

TK10E80W MOSFETs Silicon N-Channel MOS (DTMOS ) TK10E80W TK10E80W TK10E80W TK10E80W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.46 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhan

 ..2. Size:246K  inchange semiconductor
 tk10e80w.pdf pdf_icon

TK10E80W

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK10E80W ITK10E80W FEATURES Low drain-source on-resistance RDS(on) 0.55 . Enhancement mode Vth =3.0 to 4.0V (VDS = 10 V, ID=0.45mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =

 9.1. Size:251K  toshiba
 tk10e60w.pdf pdf_icon

TK10E80W

TK10E60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK10E60W TK10E60W TK10E60W TK10E60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.327 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E

 9.2. Size:246K  inchange semiconductor
 tk10e60w.pdf pdf_icon

TK10E80W

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK10E60W ITK10E60W FEATURES Low drain-source on-resistance RDS(on) 0.38 . Enhancement mode Vth =2.7 to 3.7V (VDS = 10 V, ID=0.5mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =2

MOSTRAR MÁS

Otros transistores... IRFP7718 , IRL40B212 , IRL40B215 , IRL60B216 , IRL8114 , TK10A50W , TK10A60D5 , TK10A80W , IRFP460 , TK12A50D5 , TK12A50W , TK12A80W , TK17A65W , TK17A65W5 , TK17E80W , TK19A50W , TK22A65X5 .

 

 

 


🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: ASU70R600E | ASU65R850E | ASU65R550E | ASU65R350E | ASR65R120EFD | ASR65R046EFD | ASQ65R046EFD | ASM65R280E | ASM60R330E | ASE70R950E | ASD80R750E | ASD70R950E | ASD70R600E | ASD70R380E | ASD65R850E | ASD65R550E

 

 

 

Popular searches

d880 transistor | 2sc1845 | p60nf06 | 2sa1837 | ksc1845 transistor | irf630 datasheet | mpsa13 equivalent | c5198

 

 

↑ Back to Top
.