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TK10E80W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TK10E80W
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 130 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 27 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.55 Ohm
   Paquete / Cubierta: TO220
 

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TK10E80W Datasheet (PDF)

 ..1. Size:421K  toshiba
 tk10e80w.pdf pdf_icon

TK10E80W

TK10E80WMOSFETs Silicon N-Channel MOS (DTMOS)TK10E80WTK10E80WTK10E80WTK10E80W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.46 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhan

 ..2. Size:246K  inchange semiconductor
 tk10e80w.pdf pdf_icon

TK10E80W

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK10E80WITK10E80WFEATURESLow drain-source on-resistance:RDS(on) 0.55.Enhancement mode:Vth =3.0 to 4.0V (VDS = 10 V, ID=0.45mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =

 9.1. Size:251K  toshiba
 tk10e60w.pdf pdf_icon

TK10E80W

TK10E60WMOSFETs Silicon N-Channel MOS (DTMOS)TK10E60WTK10E60WTK10E60WTK10E60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.327 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

 9.2. Size:246K  inchange semiconductor
 tk10e60w.pdf pdf_icon

TK10E80W

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK10E60WITK10E60WFEATURESLow drain-source on-resistance:RDS(on) 0.38.Enhancement mode:Vth =2.7 to 3.7V (VDS = 10 V, ID=0.5mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =2

MOSTRAR MÁS

Otros transistores... IRFP7718 , IRL40B212 , IRL40B215 , IRL60B216 , IRL8114 , TK10A50W , TK10A60D5 , TK10A80W , IRF640 , TK12A50D5 , TK12A50W , TK12A80W , TK17A65W , TK17A65W5 , TK17E80W , TK19A50W , TK22A65X5 .

History: WMN26N65SR | WNMD2167 | STI57N65M5

 

 
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