TK10E80W PDF and Equivalents Search

 

TK10E80W Specs and Replacement

Type Designator: TK10E80W

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 130 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 27 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm

Package: TO220

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TK10E80W datasheet

 ..1. Size:421K  toshiba
 tk10e80w.pdf pdf_icon

TK10E80W

TK10E80W MOSFETs Silicon N-Channel MOS (DTMOS ) TK10E80W TK10E80W TK10E80W TK10E80W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.46 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhan... See More ⇒

 ..2. Size:246K  inchange semiconductor
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TK10E80W

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK10E80W ITK10E80W FEATURES Low drain-source on-resistance RDS(on) 0.55 . Enhancement mode Vth =3.0 to 4.0V (VDS = 10 V, ID=0.45mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =... See More ⇒

 9.1. Size:251K  toshiba
 tk10e60w.pdf pdf_icon

TK10E80W

TK10E60W MOSFETs Silicon N-Channel MOS (DTMOS ) TK10E60W TK10E60W TK10E60W TK10E60W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.327 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E... See More ⇒

 9.2. Size:246K  inchange semiconductor
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TK10E80W

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK10E60W ITK10E60W FEATURES Low drain-source on-resistance RDS(on) 0.38 . Enhancement mode Vth =2.7 to 3.7V (VDS = 10 V, ID=0.5mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =2... See More ⇒

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Detailed specifications: IRFP7718, IRL40B212, IRL40B215, IRL60B216, IRL8114, TK10A50W, TK10A60D5, TK10A80W, IRFP460, TK12A50D5, TK12A50W, TK12A80W, TK17A65W, TK17A65W5, TK17E80W, TK19A50W, TK22A65X5

Keywords - TK10E80W MOSFET specs

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