TK12A50W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TK12A50W
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 11.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 23 nS
   Cossⓘ - Capacitancia de salida: 23 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
   Paquete / Cubierta: TO-220F

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TK12A50W Datasheet (PDF)

..1. Size:238K toshiba
tk12a50w.pdf

TK12A50WMOSFETs Silicon N-Channel MOS (DTMOS)TK12A50WTK12A50WTK12A50WTK12A50W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.265 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

..2. Size:253K inchange semiconductor
tk12a50w.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK12A50W,ITK12A50WFEATURESLow drain-source on-resistance: RDS(ON) = 0.3Easy to control Gate switchingEnhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID=0.6 mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulators

7.1. Size:276K toshiba
tk12a50d5.pdf

TK12A50D5MOSFETs Silicon N-Channel MOS (-MOS)TK12A50D5TK12A50D5TK12A50D5TK12A50D51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trrf = 50 ns (typ.), trr = 120 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.5 (typ.)(3) High

7.2. Size:254K toshiba
tk12a50d.pdf

TK12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS) TK12A50D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.45 (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Abs

7.3. Size:253K inchange semiconductor
tk12a50d5.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK12A50D5ITK12A50D5FEATURESLow drain-source on-resistance:RDS(ON) = 0.5 (typ.)Enhancement mode:Vth = 2.5 to 4.5V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATING

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