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TK12A50W Specs and Replacement

Type Designator: TK12A50W

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 23 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO-220F

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TK12A50W datasheet

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TK12A50W

TK12A50W MOSFETs Silicon N-Channel MOS (DTMOS ) TK12A50W TK12A50W TK12A50W TK12A50W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.265 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E... See More ⇒

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TK12A50W

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TK12A50W

TK12A50D5 MOSFETs Silicon N-Channel MOS ( -MOS ) TK12A50D5 TK12A50D5 TK12A50D5 TK12A50D5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trrf = 50 ns (typ.), trr = 120 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.5 (typ.) (3) High ... See More ⇒

 7.2. Size:254K  toshiba
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TK12A50W

TK12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS ) TK12A50D Switching Regulator Applications Unit mm Low drain-source ON-resistance RDS (ON) = 0.45 (typ.) High forward transfer admittance Yfs = 6.0 S (typ.) Low leakage current IDSS = 10 A (max) (VDS = 500 V) Enhancement mode Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Abs... See More ⇒

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Detailed specifications: IRL40B215, IRL60B216, IRL8114, TK10A50W, TK10A60D5, TK10A80W, TK10E80W, TK12A50D5, IRF640, TK12A80W, TK17A65W, TK17A65W5, TK17E80W, TK19A50W, TK22A65X5, TK290A60Y, TK290A65Y

Keywords - TK12A50W MOSFET specs

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