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TK17E80W MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TK17E80W

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 180 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 17 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 24 nS

Cossⓘ - Capacitancia de salida: 42 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.29 Ohm

Encapsulados: TO220

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TK17E80W datasheet

 ..1. Size:418K  toshiba
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TK17E80W

TK17E80W MOSFETs Silicon N-Channel MOS (DTMOS ) TK17E80W TK17E80W TK17E80W TK17E80W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.25 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enhan

 ..2. Size:246K  inchange semiconductor
tk17e80w.pdf pdf_icon

TK17E80W

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK17E80W ITK17E80W FEATURES Low drain-source on-resistance RDS(on) 0.29 . Enhancement mode Vth =3.0 to 4.0V (VDS = 10 V, ID=0.85mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =

 9.1. Size:250K  toshiba
tk17e65w.pdf pdf_icon

TK17E80W

TK17E65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK17E65W TK17E65W TK17E65W TK17E65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.17 (typ.) by used to Super Junction Structure DTMOS (2) Easy to control Gate switching (3) En

 9.2. Size:246K  inchange semiconductor
tk17e65w.pdf pdf_icon

TK17E80W

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK17E65W ITK17E65W FEATURES Low drain-source on-resistance RDS(on) 0.2 . Enhancement mode Vth =2.5 to 3.5V (VDS = 10 V, ID=0.9mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =

Otros transistores... TK10A60D5 , TK10A80W , TK10E80W , TK12A50D5 , TK12A50W , TK12A80W , TK17A65W , TK17A65W5 , IRF640N , TK19A50W , TK22A65X5 , TK290A60Y , TK290A65Y , TK380A60Y , TK380A65Y , TK3A90E , TK3R1A04PL .

History: MMF65R600QTH | MMF80R450PBTH

 

 

 

 

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