TK17E80W Datasheet and Replacement. Cross Reference Search

TK17E80W Datasheet (PDF)

..1. Size:418K toshiba
tk17e80w.pdf pdf_icon

TK17E80WMOSFETs Silicon N-Channel MOS (DTMOS)TK17E80WTK17E80WTK17E80WTK17E80W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.25 (typ.)by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enhan

..2. Size:246K inchange semiconductor
tk17e80w.pdf pdf_icon

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK17E80WITK17E80WFEATURESLow drain-source on-resistance:RDS(on) 0.29.Enhancement mode:Vth =3.0 to 4.0V (VDS = 10 V, ID=0.85mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =

9.1. Size:250K toshiba
tk17e65w.pdf pdf_icon

TK17E65WMOSFETs Silicon N-Channel MOS (DTMOS)TK17E65WTK17E65WTK17E65WTK17E65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.17 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) En

9.2. Size:246K inchange semiconductor
tk17e65w.pdf pdf_icon

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK17E65WITK17E65WFEATURESLow drain-source on-resistance:RDS(on) 0.2.Enhancement mode:Vth =2.5 to 3.5V (VDS = 10 V, ID=0.9mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .