TK4R3E06PL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: TK4R3E06PL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 87 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 600 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0043 Ohm
   Paquete / Cubierta: TO220

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TK4R3E06PL Datasheet (PDF)

..1. Size:440K toshiba
tk4r3e06pl.pdf

TK4R3E06PLMOSFETs Silicon N-channel MOS (U-MOS-H)TK4R3E06PLTK4R3E06PLTK4R3E06PLTK4R3E06PL1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 15.1 nC (typ.)(3) Small o

..2. Size:246K inchange semiconductor
tk4r3e06pl.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK4R3E06PLITK4R3E06PLFEATURESLow drain-source on-resistance:RDS(on) 4.3m. (VGS = 10 V)Enhancement mode:Vth =1.5 to 2.5V (VDS = 10 V, ID=0.5mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAX

9.1. Size:429K toshiba
tk4r3a06pl.pdf

TK4R3A06PLMOSFETs Silicon N-channel MOS (U-MOS-H)TK4R3A06PLTK4R3A06PLTK4R3A06PLTK4R3A06PL1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 15.1 nC (typ.)(3) Small o

9.2. Size:253K inchange semiconductor
tk4r3a06pl.pdf

INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK4R3A06PLITK4R3A06PLFEATURESLow drain-source on-resistance:RDS(ON) = 3.3m (typ.) (VGS = 10 V)Enhancement mode:Vth = 1.5 to 2.5V (VDS = 10 V, ID=0.5mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOL

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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