TK4R3E06PL Todos los transistores

 

TK4R3E06PL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TK4R3E06PL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 87 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 600 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0043 Ohm

Encapsulados: TO220

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TK4R3E06PL datasheet

 ..1. Size:440K  toshiba
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TK4R3E06PL

TK4R3E06PL MOSFETs Silicon N-channel MOS (U-MOS -H) TK4R3E06PL TK4R3E06PL TK4R3E06PL TK4R3E06PL 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Small gate charge QSW = 15.1 nC (typ.) (3) Small o

 ..2. Size:246K  inchange semiconductor
tk4r3e06pl.pdf pdf_icon

TK4R3E06PL

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK4R3E06PL ITK4R3E06PL FEATURES Low drain-source on-resistance RDS(on) 4.3m . (VGS = 10 V) Enhancement mode Vth =1.5 to 2.5V (VDS = 10 V, ID=0.5mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAX

 9.1. Size:429K  toshiba
tk4r3a06pl.pdf pdf_icon

TK4R3E06PL

TK4R3A06PL MOSFETs Silicon N-channel MOS (U-MOS -H) TK4R3A06PL TK4R3A06PL TK4R3A06PL TK4R3A06PL 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Small gate charge QSW = 15.1 nC (typ.) (3) Small o

 9.2. Size:253K  inchange semiconductor
tk4r3a06pl.pdf pdf_icon

TK4R3E06PL

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK4R3A06PL ITK4R3A06PL FEATURES Low drain-source on-resistance RDS(ON) = 3.3m (typ.) (VGS = 10 V) Enhancement mode Vth = 1.5 to 2.5V (VDS = 10 V, ID=0.5mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOL

Otros transistores... TK380A60Y , TK380A65Y , TK3A90E , TK3R1A04PL , TK3R3A06PL , TK3R3E03GL , TK4A80E , TK4R3A06PL , IRF630 , TK560A60Y , TK560A65Y , TK5A90E , TK5R1E06PL , TK5R3A06PL , TK7E80W , TK8R2A06PL , TK8R2E06PL .

History: TK560A60Y | WSF07N10 | IPP032N06N3

 

 

 


History: TK560A60Y | WSF07N10 | IPP032N06N3

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