TK4R3E06PL MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TK4R3E06PL
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 87 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 80 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 48.2 nC
Время нарастания (tr): 10 ns
Выходная емкость (Cd): 600 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0043 Ohm
Тип корпуса: TO220
Аналог (замена) для TK4R3E06PL
TK4R3E06PL Datasheet (PDF)
tk4r3e06pl.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
TK4R3E06PLMOSFETs Silicon N-channel MOS (U-MOS-H)TK4R3E06PLTK4R3E06PLTK4R3E06PLTK4R3E06PL1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 15.1 nC (typ.)(3) Small o
tk4r3e06pl.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK4R3E06PLITK4R3E06PLFEATURESLow drain-source on-resistance:RDS(on) 4.3m. (VGS = 10 V)Enhancement mode:Vth =1.5 to 2.5V (VDS = 10 V, ID=0.5mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAX
tk4r3a06pl.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
TK4R3A06PLMOSFETs Silicon N-channel MOS (U-MOS-H)TK4R3A06PLTK4R3A06PLTK4R3A06PLTK4R3A06PL1. Applications1. Applications1. Applications1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers2. Features2. Features2. Features2. Features(1) High-speed switching(2) Small gate charge: QSW = 15.1 nC (typ.)(3) Small o
tk4r3a06pl.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK4R3A06PLITK4R3A06PLFEATURESLow drain-source on-resistance:RDS(ON) = 3.3m (typ.) (VGS = 10 V)Enhancement mode:Vth = 1.5 to 2.5V (VDS = 10 V, ID=0.5mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOL
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .