TK4R3E06PL - аналоги, параметры транзистора - Справочник транзисторов

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TK4R3E06PL MOSFETs Silicon N-channel MOS (U-MOS -H) TK4R3E06PL TK4R3E06PL TK4R3E06PL TK4R3E06PL 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Small gate charge QSW = 15.1 nC (typ.) (3) Small o

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK4R3E06PL ITK4R3E06PL FEATURES Low drain-source on-resistance RDS(on) 4.3m . (VGS = 10 V) Enhancement mode Vth =1.5 to 2.5V (VDS = 10 V, ID=0.5mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAX

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TK4R3A06PL MOSFETs Silicon N-channel MOS (U-MOS -H) TK4R3A06PL TK4R3A06PL TK4R3A06PL TK4R3A06PL 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Small gate charge QSW = 15.1 nC (typ.) (3) Small o

9.2. Size:253K inchange semiconductor
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INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK4R3A06PL ITK4R3A06PL FEATURES Low drain-source on-resistance RDS(ON) = 3.3m (typ.) (VGS = 10 V) Enhancement mode Vth = 1.5 to 2.5V (VDS = 10 V, ID=0.5mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOL

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