TK4R3E06PL PDF and Equivalents Search

 

TK4R3E06PL Specs and Replacement

Type Designator: TK4R3E06PL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 87 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 600 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0043 Ohm

Package: TO220

TK4R3E06PL substitution

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TK4R3E06PL datasheet

 ..1. Size:440K  toshiba
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TK4R3E06PL

TK4R3E06PL MOSFETs Silicon N-channel MOS (U-MOS -H) TK4R3E06PL TK4R3E06PL TK4R3E06PL TK4R3E06PL 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Small gate charge QSW = 15.1 nC (typ.) (3) Small o... See More ⇒

 ..2. Size:246K  inchange semiconductor
 tk4r3e06pl.pdf pdf_icon

TK4R3E06PL

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK4R3E06PL ITK4R3E06PL FEATURES Low drain-source on-resistance RDS(on) 4.3m . (VGS = 10 V) Enhancement mode Vth =1.5 to 2.5V (VDS = 10 V, ID=0.5mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAX... See More ⇒

 9.1. Size:429K  toshiba
 tk4r3a06pl.pdf pdf_icon

TK4R3E06PL

TK4R3A06PL MOSFETs Silicon N-channel MOS (U-MOS -H) TK4R3A06PL TK4R3A06PL TK4R3A06PL TK4R3A06PL 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Small gate charge QSW = 15.1 nC (typ.) (3) Small o... See More ⇒

 9.2. Size:253K  inchange semiconductor
 tk4r3a06pl.pdf pdf_icon

TK4R3E06PL

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK4R3A06PL ITK4R3A06PL FEATURES Low drain-source on-resistance RDS(ON) = 3.3m (typ.) (VGS = 10 V) Enhancement mode Vth = 1.5 to 2.5V (VDS = 10 V, ID=0.5mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOL... See More ⇒

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Detailed specifications: TK380A60Y, TK380A65Y, TK3A90E, TK3R1A04PL, TK3R3A06PL, TK3R3E03GL, TK4A80E, TK4R3A06PL, IRF630, TK560A60Y, TK560A65Y, TK5A90E, TK5R1E06PL, TK5R3A06PL, TK7E80W, TK8R2A06PL, TK8R2E06PL

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