TK560A60Y MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TK560A60Y
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20 nS
Cossⓘ - Capacitancia de salida: 18 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.56 Ohm
Encapsulados: TO-220F
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TK560A60Y datasheet
tk560a60y.pdf
TK560A60Y MOSFETs Silicon N-Channel MOS (DTMOS ) TK560A60Y TK560A60Y TK560A60Y TK560A60Y 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.43 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E
tk560a60y.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK560A60Y ITK560A60Y FEATURES Low drain-source on-resistance RDS(ON) = 0.56 Easy to control Gate switching Enhancement mode Vth = 3 to 4V (VDS = 10 V, ID=0.24mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators
tk560a65y.pdf
TK560A65Y MOSFETs Silicon N-Channel MOS (DTMOS ) TK560A65Y TK560A65Y TK560A65Y TK560A65Y 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.43 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) E
Otros transistores... TK380A65Y , TK3A90E , TK3R1A04PL , TK3R3A06PL , TK3R3E03GL , TK4A80E , TK4R3A06PL , TK4R3E06PL , IRF9540 , TK560A65Y , TK5A90E , TK5R1E06PL , TK5R3A06PL , TK7E80W , TK8R2A06PL , TK8R2E06PL , FS5KM-10A .
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