All MOSFET. TK560A60Y Datasheet

 

TK560A60Y MOSFET. Datasheet pdf. Equivalent


   Type Designator: TK560A60Y
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 14.5 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 18 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.56 Ohm
   Package: TO-220F

 TK560A60Y Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TK560A60Y Datasheet (PDF)

 ..1. Size:444K  toshiba
 tk560a60y.pdf

TK560A60Y TK560A60Y

TK560A60YMOSFETs Silicon N-Channel MOS (DTMOS)TK560A60YTK560A60YTK560A60YTK560A60Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.43 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

 ..2. Size:252K  inchange semiconductor
 tk560a60y.pdf

TK560A60Y TK560A60Y

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK560A60YITK560A60YFEATURESLow drain-source on-resistance: RDS(ON) = 0.56Easy to control Gate switchingEnhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=0.24mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulators

 7.1. Size:445K  toshiba
 tk560a65y.pdf

TK560A60Y TK560A60Y

TK560A65YMOSFETs Silicon N-Channel MOS (DTMOS)TK560A65YTK560A65YTK560A65YTK560A65Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.43 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

 7.2. Size:252K  inchange semiconductor
 tk560a65y.pdf

TK560A60Y TK560A60Y

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK560A65YITK560A65YFEATURESLow drain-source on-resistance: RDS(ON) = 0.56Enhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=0.24mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: CSFR2N60D

 

 
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