Справочник MOSFET. TK560A60Y

 

TK560A60Y MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: TK560A60Y
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 30 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 18 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.56 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для TK560A60Y

 

 

TK560A60Y Datasheet (PDF)

 ..1. Size:444K  toshiba
 tk560a60y.pdf

TK560A60Y TK560A60Y

TK560A60YMOSFETs Silicon N-Channel MOS (DTMOS)TK560A60YTK560A60YTK560A60YTK560A60Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.43 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

 ..2. Size:252K  inchange semiconductor
 tk560a60y.pdf

TK560A60Y TK560A60Y

INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK560A60YITK560A60YFEATURESLow drain-source on-resistance: RDS(ON) = 0.56Easy to control Gate switchingEnhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=0.24mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulators

 7.1. Size:445K  toshiba
 tk560a65y.pdf

TK560A60Y TK560A60Y

TK560A65YMOSFETs Silicon N-Channel MOS (DTMOS)TK560A65YTK560A65YTK560A65YTK560A65Y1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.43 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

 7.2. Size:252K  inchange semiconductor
 tk560a65y.pdf

TK560A60Y TK560A60Y

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor TK560A65YITK560A65YFEATURESLow drain-source on-resistance: RDS(ON) = 0.56Enhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=0.24mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25

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