TK8R2A06PL Todos los transistores

 

TK8R2A06PL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TK8R2A06PL

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 36 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 350 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0082 Ohm

Encapsulados: TO-220F

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TK8R2A06PL datasheet

 ..1. Size:601K  toshiba
tk8r2a06pl.pdf pdf_icon

TK8R2A06PL

TK8R2A06PL MOSFETs Silicon N-channel MOS (U-MOS -H) TK8R2A06PL TK8R2A06PL TK8R2A06PL TK8R2A06PL 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Small gate charge QSW = 10 nC (typ.) (3) Small out

 ..2. Size:258K  inchange semiconductor
tk8r2a06pl.pdf pdf_icon

TK8R2A06PL

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK8R2A06PL ITK8R2A06PL FEATURES Low drain-source on-resistance RDS(ON) = 8.2m (VGS = 10 V) Enhancement mode Vth = 1.5 to 2.5V (VDS = 10 V, ID=0.3mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAX

 9.1. Size:545K  toshiba
tk8r2e06pl.pdf pdf_icon

TK8R2A06PL

TK8R2E06PL MOSFETs Silicon N-channel MOS (U-MOS -H) TK8R2E06PL TK8R2E06PL TK8R2E06PL TK8R2E06PL 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Small gate charge QSW = 9.7 nC (typ.) (3) Small ou

 9.2. Size:246K  inchange semiconductor
tk8r2e06pl.pdf pdf_icon

TK8R2A06PL

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK8R2E06PL ITK8R2E06PL FEATURES Low drain-source on-resistance RDS(on) 8.2m . (VGS = 10 V) Enhancement mode Vth =1.5 to 2.5V (VDS = 10 V, ID=0.3mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAX

Otros transistores... TK4R3A06PL , TK4R3E06PL , TK560A60Y , TK560A65Y , TK5A90E , TK5R1E06PL , TK5R3A06PL , TK7E80W , IRF4905 , TK8R2E06PL , FS5KM-10A , HY3810P , HY3810M , HY3810B , HY3810PS , HY3810PM , HY3906P .

 

 

 


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