TK8R2A06PL MOSFET Datasheet: N-Ch, 60V, 50A. Full specification with pinout and replacement list

TK8R2A06PL Specs and Replacement

Type Designator: TK8R2A06PL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0082 Ohm

Package: TO-220F

TK8R2A06PL substitution

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TK8R2A06PL datasheet

..1. Size:601K toshiba
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TK8R2A06PL MOSFETs Silicon N-channel MOS (U-MOS -H) TK8R2A06PL TK8R2A06PL TK8R2A06PL TK8R2A06PL 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Small gate charge QSW = 10 nC (typ.) (3) Small out... See More ⇒

..2. Size:258K inchange semiconductor
tk8r2a06pl.pdf pdf_icon

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK8R2A06PL ITK8R2A06PL FEATURES Low drain-source on-resistance RDS(ON) = 8.2m (VGS = 10 V) Enhancement mode Vth = 1.5 to 2.5V (VDS = 10 V, ID=0.3mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAX... See More ⇒

9.1. Size:545K toshiba
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TK8R2E06PL MOSFETs Silicon N-channel MOS (U-MOS -H) TK8R2E06PL TK8R2E06PL TK8R2E06PL TK8R2E06PL 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Small gate charge QSW = 9.7 nC (typ.) (3) Small ou... See More ⇒

9.2. Size:246K inchange semiconductor
tk8r2e06pl.pdf pdf_icon

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK8R2E06PL ITK8R2E06PL FEATURES Low drain-source on-resistance RDS(on) 8.2m . (VGS = 10 V) Enhancement mode Vth =1.5 to 2.5V (VDS = 10 V, ID=0.3mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAX... See More ⇒

Detailed specifications: TK4R3A06PL, TK4R3E06PL, TK560A60Y, TK560A65Y, TK5A90E, TK5R1E06PL, TK5R3A06PL, TK7E80W, IRF4905, TK8R2E06PL, FS5KM-10A, HY3810P, HY3810M, HY3810B, HY3810PS, HY3810PM, HY3906P