TK8R2A06PL datasheet, аналоги, основные параметры

Наименование производителя: TK8R2A06PL  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 36 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 5 ns

Cossⓘ - Выходная емкость: 350 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0082 Ohm

Тип корпуса: TO-220F

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Аналог (замена) для TK8R2A06PL

- подборⓘ MOSFET транзистора по параметрам

 

TK8R2A06PL даташит

 ..1. Size:601K  toshiba
 tk8r2a06pl.pdf pdf_icon

TK8R2A06PL

TK8R2A06PL MOSFETs Silicon N-channel MOS (U-MOS -H) TK8R2A06PL TK8R2A06PL TK8R2A06PL TK8R2A06PL 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Small gate charge QSW = 10 nC (typ.) (3) Small out

 ..2. Size:258K  inchange semiconductor
 tk8r2a06pl.pdf pdf_icon

TK8R2A06PL

INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK8R2A06PL ITK8R2A06PL FEATURES Low drain-source on-resistance RDS(ON) = 8.2m (VGS = 10 V) Enhancement mode Vth = 1.5 to 2.5V (VDS = 10 V, ID=0.3mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAX

 9.1. Size:545K  toshiba
 tk8r2e06pl.pdf pdf_icon

TK8R2A06PL

TK8R2E06PL MOSFETs Silicon N-channel MOS (U-MOS -H) TK8R2E06PL TK8R2E06PL TK8R2E06PL TK8R2E06PL 1. Applications 1. Applications 1. Applications 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers 2. Features 2. Features 2. Features 2. Features (1) High-speed switching (2) Small gate charge QSW = 9.7 nC (typ.) (3) Small ou

 9.2. Size:246K  inchange semiconductor
 tk8r2e06pl.pdf pdf_icon

TK8R2A06PL

INCHANGE Semiconductor isc N-Channel MOSFET Transistor TK8R2E06PL ITK8R2E06PL FEATURES Low drain-source on-resistance RDS(on) 8.2m . (VGS = 10 V) Enhancement mode Vth =1.5 to 2.5V (VDS = 10 V, ID=0.3mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAX

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