HYG067N07NQ1P Todos los transistores

 

HYG067N07NQ1P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HYG067N07NQ1P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 136 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 68 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 233.2 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm

Encapsulados: TO-220

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HYG067N07NQ1P datasheet

 2.1. Size:1595K  hymexa
hyg067n07nq1.pdf pdf_icon

HYG067N07NQ1P

HYG067N07NQ1P/B/PS N-Channel Enhancement Mode MOSFET Feature Pin Description 68V/80A RDS(ON)= 6.5m (typ.)@VGS = 10V 100% Avalanche Tested S D Reliable and Rugged G Lead-Free and Green Devices Available S S D D G G (RoHS Compliant) TO-220FB-3L TO-3PS-3L TO-263-2L Applications Portable equipment and battery powered systems DC-DC Converters Switch

 9.1. Size:1408K  hymexa
hyg065n15ns1p hyg065n15ns1b.pdf pdf_icon

HYG067N07NQ1P

HYG065N15NS1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 150V/165A RDS(ON)=6.2m (typ.) @ VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Power Switching application Uninterruptible Power Supply N-Channel MOSFET Ordering and Marking Information Pa

 9.2. Size:934K  hymexa
hyg060p04lq1d hyg060p04lq1u hyg060p04lq1v.pdf pdf_icon

HYG067N07NQ1P

HYG060P04LQ1D/U/V P-Channel Enhancement Mode MOSFET Feature Pin Description -40V/-70A RDS(ON)= 5.8 m (typ.) @VGS = -10V RDS(ON)= 8.5 m (typ.) @VGS = -4.5V S D S G D S 100% avalanche tested G S S Reliable and Rugged D G S Halogen Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Switching

 9.3. Size:1248K  hymexa
hyg064n08na1p hyg064n08na1b.pdf pdf_icon

HYG067N07NQ1P

HYG064N08NA1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 80V/120A RDS(ON)= 6.4m (typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged S D Lead-Free and Green Devices Available G S (RoHS Compliant) D G TO-220FB-3L TO-263-2L Applications Switching application Power management for inverter system N-Channel MOSFET Ordering and Ma

Otros transistores... FS5KM-10A , HY3810P , HY3810M , HY3810B , HY3810PS , HY3810PM , HY3906P , HY3906B , AON7410 , HYG067N07NQ1B , HYG067N07NQ1PS , IPP07N03L , IPB07N03L , IPW60R060P7 , SVF4N65T , SVF4N65F , SVF4N65FG .

History: SI3139KL3 | WMO26N65F2 | WMJ80R480S | SUP60N06-18 | APT4014BVFR | APT47N65BC3 | HY3810PM

 

 

 

 

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