HYG067N07NQ1P PDF and Equivalents Search

 

HYG067N07NQ1P Specs and Replacement

Type Designator: HYG067N07NQ1P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 136 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 233.2 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: TO-220

HYG067N07NQ1P substitution

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HYG067N07NQ1P datasheet

 2.1. Size:1595K  hymexa
hyg067n07nq1.pdf pdf_icon

HYG067N07NQ1P

HYG067N07NQ1P/B/PS N-Channel Enhancement Mode MOSFET Feature Pin Description 68V/80A RDS(ON)= 6.5m (typ.)@VGS = 10V 100% Avalanche Tested S D Reliable and Rugged G Lead-Free and Green Devices Available S S D D G G (RoHS Compliant) TO-220FB-3L TO-3PS-3L TO-263-2L Applications Portable equipment and battery powered systems DC-DC Converters Switch... See More ⇒

 9.1. Size:1408K  hymexa
hyg065n15ns1p hyg065n15ns1b.pdf pdf_icon

HYG067N07NQ1P

HYG065N15NS1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 150V/165A RDS(ON)=6.2m (typ.) @ VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Power Switching application Uninterruptible Power Supply N-Channel MOSFET Ordering and Marking Information Pa... See More ⇒

 9.2. Size:934K  hymexa
hyg060p04lq1d hyg060p04lq1u hyg060p04lq1v.pdf pdf_icon

HYG067N07NQ1P

HYG060P04LQ1D/U/V P-Channel Enhancement Mode MOSFET Feature Pin Description -40V/-70A RDS(ON)= 5.8 m (typ.) @VGS = -10V RDS(ON)= 8.5 m (typ.) @VGS = -4.5V S D S G D S 100% avalanche tested G S S Reliable and Rugged D G S Halogen Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Switching... See More ⇒

 9.3. Size:1248K  hymexa
hyg064n08na1p hyg064n08na1b.pdf pdf_icon

HYG067N07NQ1P

HYG064N08NA1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 80V/120A RDS(ON)= 6.4m (typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged S D Lead-Free and Green Devices Available G S (RoHS Compliant) D G TO-220FB-3L TO-263-2L Applications Switching application Power management for inverter system N-Channel MOSFET Ordering and Ma... See More ⇒

Detailed specifications: FS5KM-10A, HY3810P, HY3810M, HY3810B, HY3810PS, HY3810PM, HY3906P, HY3906B, AON7410, HYG067N07NQ1B, HYG067N07NQ1PS, IPP07N03L, IPB07N03L, IPW60R060P7, SVF4N65T, SVF4N65F, SVF4N65FG

Keywords - HYG067N07NQ1P MOSFET specs

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