Справочник MOSFET. HYG067N07NQ1P

 

HYG067N07NQ1P Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: HYG067N07NQ1P
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 136 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 68 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 13 ns
   Cossⓘ - Выходная емкость: 233.2 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0075 Ohm
   Тип корпуса: TO-220
     - подбор MOSFET транзистора по параметрам

 

HYG067N07NQ1P Datasheet (PDF)

 2.1. Size:1595K  hymexa
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HYG067N07NQ1P

HYG067N07NQ1P/B/PSN-Channel Enhancement Mode MOSFETFeature Pin Description 68V/80ARDS(ON)= 6.5m(typ.)@VGS = 10V 100% Avalanche TestedSD Reliable and RuggedG Lead-Free and Green Devices AvailableSSDDGG(RoHS Compliant)TO-220FB-3L TO-3PS-3L TO-263-2LApplications Portable equipment and battery powered systems DC-DC Converters Switch

 9.1. Size:1408K  hymexa
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HYG067N07NQ1P

HYG065N15NS1P/BN-Channel Enhancement Mode MOSFETFeature Pin Description 150V/165ARDS(ON)=6.2m(typ.) @ VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available(RoHS Compliant)TO-220FB-3L TO-263-2LApplications Power Switching application Uninterruptible Power SupplyN-Channel MOSFETOrdering and Marking InformationPa

 9.2. Size:934K  hymexa
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HYG067N07NQ1P

HYG060P04LQ1D/U/V P-Channel Enhancement Mode MOSFET Feature Pin Description -40V/-70A RDS(ON)= 5.8 m(typ.) @VGS = -10V RDS(ON)= 8.5 m(typ.) @VGS = -4.5V SD SG D S 100% avalanche tested G S S Reliable and Rugged D G S Halogen Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Switching

 9.3. Size:1248K  hymexa
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HYG067N07NQ1P

HYG064N08NA1P/B N-Channel Enhancement Mode MOSFETFeature Pin Description 80V/120ARDS(ON)= 6.4m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and RuggedSD Lead-Free and Green Devices AvailableGS(RoHS Compliant)DGTO-220FB-3L TO-263-2LApplications Switching application Power management for inverter systemN-Channel MOSFETOrdering and Ma

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: KIA840S-263 | NVMFS5C628N | RJK005N03 | NCEP026N10F | MC11N005 | SI7913DN | JCS5N50CT

 

 
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