BLV108 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BLV108 Datasheet (PDF)

..1. Size:86K belling
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BLV108 N MOSFET N MOSFETN MOSFETN MOSFET: :: : N VDMOS (T=25) (T=25) (T=25)

9.1. Size:63K philips
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DISCRETE SEMICONDUCTORSDATA SHEETBLV100UHF power transistorMarch 1993Product specificationPhilips Semiconductors Product specificationUHF power transistor BLV100FEATURES PIN CONFIGURATION Internal input matching to achievehigh power gain Ballasting resistors for an optimumhalfpagetemperature profile Gold metallization ensuresexcellent reliability.1 2c

9.2. Size:66K philips
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DISCRETE SEMICONDUCTORSDATA SHEETBLV10VHF power transistorAugust 1986Product specificationPhilips Semiconductors Product specificationVHF power transistor BLV10It has a 3/8 flange envelope with aDESCRIPTIONceramic cap. All leads are isolatedN-P-N silicon planar epitaxialfrom the flange.transistor intended for use in class-A,B and C operated mobile, h.f. andv.h.

9.3. Size:70K philips
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DISCRETE SEMICONDUCTORSDATA SHEETBLV103UHF power transistorMarch 1993Product specificationPhilips Semiconductors Product specificationUHF power transistor BLV103FEATURES QUICK REFERENCE DATARF performance at Th =25C in a common emitter test circuit. Internal matching for an optimumwideband capability and high gainf VCE PL Gp CMODE OF OPERATION Emitter-ball

Otros transistores... ID7509 , ED7509 , DFF2N60 , NCE60H10F , STK0760P , TPC8228H , SUP60N06-18 , SUB60N06-18 , 2N60 , BLV1N60 , BLV1N60A , BLV2N60 , BLV4N60 , BLV640 , BLV6N60 , BLV730 , BLV740 .