BLV108 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BLV108 datasheet

..1. Size:86K belling
blv108.pdf pdf_icon

BLV108 N MOSFET N MOSFET N MOSFET N MOSFET N VDMOS (T=25 ) (T=25 ) (T=25 )

9.1. Size:63K philips
blv100.pdf pdf_icon

DISCRETE SEMICONDUCTORS DATA SHEET BLV100 UHF power transistor March 1993 Product specification Philips Semiconductors Product specification UHF power transistor BLV100 FEATURES PIN CONFIGURATION Internal input matching to achieve high power gain Ballasting resistors for an optimum halfpage temperature profile Gold metallization ensures excellent reliability. 1 2 c

9.2. Size:66K philips
blv10.pdf pdf_icon

DISCRETE SEMICONDUCTORS DATA SHEET BLV10 VHF power transistor August 1986 Product specification Philips Semiconductors Product specification VHF power transistor BLV10 It has a 3/8 flange envelope with a DESCRIPTION ceramic cap. All leads are isolated N-P-N silicon planar epitaxial from the flange. transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.

9.3. Size:70K philips
blv103.pdf pdf_icon

DISCRETE SEMICONDUCTORS DATA SHEET BLV103 UHF power transistor March 1993 Product specification Philips Semiconductors Product specification UHF power transistor BLV103 FEATURES QUICK REFERENCE DATA RF performance at Th =25 C in a common emitter test circuit. Internal matching for an optimum wideband capability and high gain f VCE PL Gp C MODE OF OPERATION Emitter-ball

Otros transistores... ID7509 , ED7509 , DFF2N60 , NCE60H10F , STK0760P , TPC8228H , SUP60N06-18 , SUB60N06-18 , 20N50 , BLV1N60 , BLV1N60A , BLV2N60 , BLV4N60 , BLV640 , BLV6N60 , BLV730 , BLV740 .