BLV108 PDF and Equivalents Search

 

BLV108 Specs and Replacement

Type Designator: BLV108

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm

Package: TO-92

BLV108 substitution

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BLV108 datasheet

 ..1. Size:86K  belling
blv108.pdf pdf_icon

BLV108

BLV108 N MOSFET N MOSFET N MOSFET N MOSFET N VDMOS (T=25 ) (T=25 ) (T=25 ) ... See More ⇒

 9.1. Size:63K  philips
blv100.pdf pdf_icon

BLV108

DISCRETE SEMICONDUCTORS DATA SHEET BLV100 UHF power transistor March 1993 Product specification Philips Semiconductors Product specification UHF power transistor BLV100 FEATURES PIN CONFIGURATION Internal input matching to achieve high power gain Ballasting resistors for an optimum halfpage temperature profile Gold metallization ensures excellent reliability. 1 2 c... See More ⇒

 9.2. Size:66K  philips
blv10.pdf pdf_icon

BLV108

DISCRETE SEMICONDUCTORS DATA SHEET BLV10 VHF power transistor August 1986 Product specification Philips Semiconductors Product specification VHF power transistor BLV10 It has a 3/8 flange envelope with a DESCRIPTION ceramic cap. All leads are isolated N-P-N silicon planar epitaxial from the flange. transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.... See More ⇒

 9.3. Size:70K  philips
blv103.pdf pdf_icon

BLV108

DISCRETE SEMICONDUCTORS DATA SHEET BLV103 UHF power transistor March 1993 Product specification Philips Semiconductors Product specification UHF power transistor BLV103 FEATURES QUICK REFERENCE DATA RF performance at Th =25 C in a common emitter test circuit. Internal matching for an optimum wideband capability and high gain f VCE PL Gp C MODE OF OPERATION Emitter-ball... See More ⇒

Detailed specifications: ID7509, ED7509, DFF2N60, NCE60H10F, STK0760P, TPC8228H, SUP60N06-18, SUB60N06-18, 20N50, BLV1N60, BLV1N60A, BLV2N60, BLV4N60, BLV640, BLV6N60, BLV730, BLV740

Keywords - BLV108 MOSFET specs

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