BSB013NE2LXI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BSB013NE2LXIOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 25 V Optimized SyncFET for high performance Buck converterRDS(on),max 1.3 mW Integrated monolithic Schottky like diode ID 163 A Low profile (

& " + $ !#& '$>EFeatures 0 VDST +5 9E88 C?4G

n-Channel Power MOSFETOptiMOSBSB017N03LX3 Data Sheet2.2, 2011-05-27Final Industrial & MultimarketOptiMOS Power-MOSFETBSB017N03LX3 G1 DescriptionOptiMOS30V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate- and output charges togetherwith lowest on state resistance in small footprint packages make Op

n-Channel Power MOSFETOptiMOSBSB014N04LX3 G Data Sheet2.2, 2011-05-24Final Industrial & MultimarketOptiMOS Power-MOSFETBSB014N04LX3 G1 DescriptionOptiMOS40V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate- and output charges togetherwith lowest on state resistance in small footprint packages make

n-Channel Power MOSFETOptiMOSBSB015N04NX3 G Data Sheet2.3, 2011-05-24Final Industrial & MultimarketOptiMOS Power-MOSFETBSB015N04NX3 G1 DescriptionOptiMOS40V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate- and output charges togetherwith lowest on state resistance in small footprint packages make

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM Power-MOSFET, 25 VBSB012NE2LXIData SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM Power-MOSFET, 25 VBSB012NE2LXICanPAK MX-size1 DescriptionFeatures Optimized SyncFET for high performance Buck converter Integrated monolithic Schottky like diode Low profile (

& " + $ !#& '$>EFeatures 0 VDSU * CG

n-Channel Power MOSFETOptiMOSBSB012NE2LX Data Sheet2.3, 2011-09-16Final Industrial & MultimarketOptiMOS Power-MOSFETBSB012NE2LX1 DescriptionOptiMOS25V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate and output charges togetherwith lowest on state resistance in small footprint packages make OptiMOS

BSB012N03LX3 G OptiMOSTM3 Power-MOSFETProduct SummaryFeaturesV 30 VDS Optimized for high switching frequency DC/DC converterR 1.2mDS(on),max Very low on-resistance RDS(on)I 180 AD Excellent gate charge x R product (FOM)DS(on)MG-WDSON-2 Low parasitic inductance Low profile (