BSB013NE2LXI Specs and Replacement
Type Designator: BSB013NE2LXI
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 36 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6.4 nS
Cossⓘ - Output Capacitance: 1900 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0013 Ohm
Package: MG-WDSON-2
BSB013NE2LXI substitution
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BSB013NE2LXI datasheet
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Detailed specifications: BS250FTC, BS250KL-TR1-E3, BS250PSTOA, BS250PSTOB, BS250PSTZ, BSB008NE2LX, BSB012N03LX3, BSB012NE2LXI, AON6414A, BSB017N03LX3, BSB044N08NN3G, BSB056N10NN3G, BSB104N08NP3G, BSB165N15NZ3G, BSB280N15NZ3G, BSC009NE2LS, BSC009NE2LS5
Keywords - BSB013NE2LXI MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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