BSB013NE2LXI PDF and Equivalents Search

 

BSB013NE2LXI Specs and Replacement

Type Designator: BSB013NE2LXI

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 36 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.4 nS

Cossⓘ - Output Capacitance: 1900 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0013 Ohm

Package: MG-WDSON-2

BSB013NE2LXI substitution

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BSB013NE2LXI datasheet

 ..1. Size:563K  infineon
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BSB013NE2LXI

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 9.1. Size:548K  infineon
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BSB013NE2LXI

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BSB013NE2LXI

n-Channel Power MOSFET OptiMOS BSB017N03LX3 Data Sheet 2.2, 2011-05-27 Final Industrial & Multimarket OptiMOS Power-MOSFET BSB017N03LX3 G 1 Description OptiMOS 30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make Op... See More ⇒

 9.3. Size:1557K  infineon
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BSB013NE2LXI

n-Channel Power MOSFET OptiMOS BSB014N04LX3 G Data Sheet 2.2, 2011-05-24 Final Industrial & Multimarket OptiMOS Power-MOSFET BSB014N04LX3 G 1 Description OptiMOS 40V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make ... See More ⇒

Detailed specifications: BS250FTC, BS250KL-TR1-E3, BS250PSTOA, BS250PSTOB, BS250PSTZ, BSB008NE2LX, BSB012N03LX3, BSB012NE2LXI, AON6414A, BSB017N03LX3, BSB044N08NN3G, BSB056N10NN3G, BSB104N08NP3G, BSB165N15NZ3G, BSB280N15NZ3G, BSC009NE2LS, BSC009NE2LS5

Keywords - BSB013NE2LXI MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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