BSB013NE2LXI - описание и поиск аналогов

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n-Channel Power MOSFET OptiMOS BSB017N03LX3 Data Sheet 2.2, 2011-05-27 Final Industrial & Multimarket OptiMOS Power-MOSFET BSB017N03LX3 G 1 Description OptiMOS 30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make Op

n-Channel Power MOSFET OptiMOS BSB014N04LX3 G Data Sheet 2.2, 2011-05-24 Final Industrial & Multimarket OptiMOS Power-MOSFET BSB014N04LX3 G 1 Description OptiMOS 40V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make

n-Channel Power MOSFET OptiMOS BSB015N04NX3 G Data Sheet 2.3, 2011-05-24 Final Industrial & Multimarket OptiMOS Power-MOSFET BSB015N04NX3 G 1 Description OptiMOS 40V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-MOSFET, 25 V BSB012NE2LXI Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM Power-MOSFET, 25 V BSB012NE2LXI CanPAK MX-size 1 Description Features Optimized SyncFET for high performance Buck converter Integrated monolithic Schottky like diode Low profile (

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n-Channel Power MOSFET OptiMOS BSB012NE2LX Data Sheet 2.3, 2011-09-16 Final Industrial & Multimarket OptiMOS Power-MOSFET BSB012NE2LX 1 Description OptiMOS 25V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make OptiMOS

BSB012N03LX3 G OptiMOSTM3 Power-MOSFET Product Summary Features V 30 V DS Optimized for high switching frequency DC/DC converter R 1.2 m DS(on),max Very low on-resistance R DS(on) I 180 A D Excellent gate charge x R product (FOM) DS(on) MG-WDSON-2 Low parasitic inductance Low profile (