BSB017N03LX3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BSB017N03LX3
   Código: 1103
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 32 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.2 V
   Qgⓘ - Carga de la puerta: 37 nC
   trⓘ - Tiempo de subida: 6.4 nS
   Cossⓘ - Capacitancia de salida: 2300 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0017 Ohm
   Paquete / Cubierta: MG-WDSON-2

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BSB017N03LX3 Datasheet (PDF)

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bsb017n03lx3 bsb017n03lx3g.pdf

n-Channel Power MOSFETOptiMOSBSB017N03LX3 Data Sheet2.2, 2011-05-27Final Industrial & MultimarketOptiMOS Power-MOSFETBSB017N03LX3 G1 DescriptionOptiMOS30V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate- and output charges togetherwith lowest on state resistance in small footprint packages make Op

9.1. Size:548K infineon
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& " + $ !#& '$>EFeatures 0 VDST +5 9E88 C?4G

9.2. Size:1557K infineon
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n-Channel Power MOSFETOptiMOSBSB014N04LX3 G Data Sheet2.2, 2011-05-24Final Industrial & MultimarketOptiMOS Power-MOSFETBSB014N04LX3 G1 DescriptionOptiMOS40V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate- and output charges togetherwith lowest on state resistance in small footprint packages make

9.3. Size:1566K infineon
bsb015n04nx3g.pdf

n-Channel Power MOSFETOptiMOSBSB015N04NX3 G Data Sheet2.3, 2011-05-24Final Industrial & MultimarketOptiMOS Power-MOSFETBSB015N04NX3 G1 DescriptionOptiMOS40V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate- and output charges togetherwith lowest on state resistance in small footprint packages make

9.4. Size:1460K infineon
bsb012ne2lxi.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM Power-MOSFET, 25 VBSB012NE2LXIData SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM Power-MOSFET, 25 VBSB012NE2LXICanPAK MX-size1 DescriptionFeatures Optimized SyncFET for high performance Buck converter Integrated monolithic Schottky like diode Low profile (

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bsb012n03lx3g.pdf

& " + $ !#& '$>EFeatures 0 VDSU * CG

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n-Channel Power MOSFETOptiMOSBSB012NE2LX Data Sheet2.3, 2011-09-16Final Industrial & MultimarketOptiMOS Power-MOSFETBSB012NE2LX1 DescriptionOptiMOS25V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate and output charges togetherwith lowest on state resistance in small footprint packages make OptiMOS

9.7. Size:563K infineon
bsb013ne2lxi.pdf

BSB013NE2LXIOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 25 V Optimized SyncFET for high performance Buck converterRDS(on),max 1.3 mW Integrated monolithic Schottky like diode ID 163 A Low profile (

9.8. Size:300K infineon
bsb012n03lx3.pdf

BSB012N03LX3 G OptiMOSTM3 Power-MOSFETProduct SummaryFeaturesV 30 VDS Optimized for high switching frequency DC/DC converterR 1.2mDS(on),max Very low on-resistance RDS(on)I 180 AD Excellent gate charge x R product (FOM)DS(on)MG-WDSON-2 Low parasitic inductance Low profile (

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