BSB017N03LX3 Datasheet. Specs and Replacement
Type Designator: BSB017N03LX3 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 32 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6.4 nS
Cossⓘ - Output Capacitance: 2300 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm
Package: MG-WDSON-2
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BSB017N03LX3 substitution
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BSB017N03LX3 datasheet
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n-Channel Power MOSFET OptiMOS BSB014N04LX3 G Data Sheet 2.2, 2011-05-24 Final Industrial & Multimarket OptiMOS Power-MOSFET BSB014N04LX3 G 1 Description OptiMOS 40V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make ... See More ⇒
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n-Channel Power MOSFET OptiMOS BSB015N04NX3 G Data Sheet 2.3, 2011-05-24 Final Industrial & Multimarket OptiMOS Power-MOSFET BSB015N04NX3 G 1 Description OptiMOS 40V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make ... See More ⇒
Detailed specifications: BS250KL-TR1-E3, BS250PSTOA, BS250PSTOB, BS250PSTZ, BSB008NE2LX, BSB012N03LX3, BSB012NE2LXI, BSB013NE2LXI, IRFB4115, BSB044N08NN3G, BSB056N10NN3G, BSB104N08NP3G, BSB165N15NZ3G, BSB280N15NZ3G, BSC009NE2LS, BSC009NE2LS5, BSC009NE2LS5I
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