BSC010NE2LSI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSC010NE2LSI
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 38 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6.2 nS
Cossⓘ - Capacitancia de salida: 1800 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00105 Ohm
Paquete / Cubierta: PG-TDSON-8
- Selección de transistores por parámetros
BSC010NE2LSI Datasheet (PDF)
bsc010ne2lsi.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM Power-MOSFET, 25 VBSC010NE2LSIData SheetRev. 2.3FinalPower Management & MultimarketOptiMOSTM Power-MOSFET, 25 VBSC010NE2LSISuperSO81 Description5867Features7685 Optimized for high performance Buck converter Monolithic integrated Schottky like diode Very low on-resi
bsc010ne2ls.pdf

BSC010NE2LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 25 V Optimized for high performance Buck converter RDS(on),max 1.0 mW Very low on-resistance R @ V =4.5 VDS(on) GSID 100 A 100% avalanche testedQOSS 33 nC Superior thermal resistanceQG(0V..10V) 64 nC N-channel Qualified according to JEDEC1) for target applicationsPG-TDSON-8
bsc010n04ls.pdf

BSC010N04LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 40 V Optimized for sychronous rectificationRDS(on),max 1.0 mW Very low on-resistance RDS(on)ID 100 A 100% avalanche testedQoss 84 nC Superior thermal resistanceQg(0V..10V) 95 nC N-channel, logic levelPG-TDSON-8 FL Qualified according to JEDEC1) for target applications (enlarg
bsc010n04lst.pdf

BSC010N04LSTMOSFETTDSON-8 FL (enlarged source interconnection)OptiMOSTM Power-MOSFET, 40 V876Features5 Optimized for sychronous rectification 175 C rated1 52 6 Very low on-resistance RDS(on) 734 8 100% avalanche tested Superior thermal resistance4 N-channel, logic level3 Qualified according to JEDEC1) for target applications 2
Otros transistores... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: NCEAP4065QU | WFY3N02 | APT904R2AN | IPG20N06S2L-50 | SVF7N60CF | IRF7309IPBF | MMBFJ112
History: NCEAP4065QU | WFY3N02 | APT904R2AN | IPG20N06S2L-50 | SVF7N60CF | IRF7309IPBF | MMBFJ112



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